Reduced Working Temperature of Quantum Dots-Light-Emitting Diodes Optimized by Quantum Dots at Silica-on-Chip StructureSource: Journal of Electronic Packaging:;2019:;volume( 141 ):;issue: 003::page 31001Author:Xie, Bin
,
Liu, Haochen
,
Sun, Xiao Wei
,
Yu, Xingjian
,
Wu, Ruikang
,
Wang, Kai
,
Luo, Xiaobing
DOI: 10.1115/1.4042981Publisher: The American Society of Mechanical Engineers (ASME)
Abstract: White light-emitting diodes (WLEDs) composed of blue LED chip, yellow phosphor, and red quantum dots (QDs) are considered as a potential alternative for next-generation artificial light source with their high luminous efficiency (LE) and color-rendering index (CRI) while QDs' poor temperature stability and the incompatibility of QDs/silicone severely hinder the wide utilization of QDs-WLEDs. To relieve this, here we proposed a separated QDs@silica nanoparticles (QSNs)/phosphor structure, which composed of a QSNs-on-chip layer with a yellow phosphor layer above. A silica shell was coated onto the QDs surface to solve the compatibility problem between QDs and silicone. With CRI > 92 and R9 > 90, the newly proposed QSNs-based WLEDs present 16.7% higher LE and lower QDs working temperature over conventional mixed type WLEDs. The reduction of QDs' temperature can reach 11.5 °C, 21.3 °C, and 30.3 °C at driving current of 80 mA, 200 mA, and 300 mA, respectively.
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contributor author | Xie, Bin | |
contributor author | Liu, Haochen | |
contributor author | Sun, Xiao Wei | |
contributor author | Yu, Xingjian | |
contributor author | Wu, Ruikang | |
contributor author | Wang, Kai | |
contributor author | Luo, Xiaobing | |
date accessioned | 2019-06-08T09:30:01Z | |
date available | 2019-06-08T09:30:01Z | |
date copyright | 4/10/2019 12:00:00 AM | |
date issued | 2019 | |
identifier issn | 1043-7398 | |
identifier other | ep_141_03_031001.pdf | |
identifier uri | http://yetl.yabesh.ir/yetl1/handle/yetl/4257836 | |
description abstract | White light-emitting diodes (WLEDs) composed of blue LED chip, yellow phosphor, and red quantum dots (QDs) are considered as a potential alternative for next-generation artificial light source with their high luminous efficiency (LE) and color-rendering index (CRI) while QDs' poor temperature stability and the incompatibility of QDs/silicone severely hinder the wide utilization of QDs-WLEDs. To relieve this, here we proposed a separated QDs@silica nanoparticles (QSNs)/phosphor structure, which composed of a QSNs-on-chip layer with a yellow phosphor layer above. A silica shell was coated onto the QDs surface to solve the compatibility problem between QDs and silicone. With CRI > 92 and R9 > 90, the newly proposed QSNs-based WLEDs present 16.7% higher LE and lower QDs working temperature over conventional mixed type WLEDs. The reduction of QDs' temperature can reach 11.5 °C, 21.3 °C, and 30.3 °C at driving current of 80 mA, 200 mA, and 300 mA, respectively. | |
publisher | The American Society of Mechanical Engineers (ASME) | |
title | Reduced Working Temperature of Quantum Dots-Light-Emitting Diodes Optimized by Quantum Dots at Silica-on-Chip Structure | |
type | Journal Paper | |
journal volume | 141 | |
journal issue | 3 | |
journal title | Journal of Electronic Packaging | |
identifier doi | 10.1115/1.4042981 | |
journal fristpage | 31001 | |
journal lastpage | 031001-6 | |
tree | Journal of Electronic Packaging:;2019:;volume( 141 ):;issue: 003 | |
contenttype | Fulltext |