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    Lattice Boltzmann Modeling of Subcontinuum Energy Transport in Crystalline and Amorphous Microelectronic Devices

    Source: Journal of Electronic Packaging:;2006:;volume( 128 ):;issue: 002::page 115
    Author:
    Rodrigo Escobar
    ,
    Brian Smith
    ,
    Cristina Amon
    DOI: 10.1115/1.2188951
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: Numerical simulations of time-dependent energy transport in semiconductor thin films are performed using the lattice Boltzmann method applied to phonon transport. The discrete lattice Boltzmann method is derived from the continuous Boltzmann transport equation assuming first gray dispersion and then nonlinear, frequency-dependent phonon dispersion for acoustic and optical phonons. Results indicate that a transition from diffusive to ballistic energy transport is found as the characteristic length of the system becomes comparable to the phonon mean free path. The methodology is used in representative microelectronics applications covering both crystalline and amorphous materials including silicon thin films and nanoporous silica dielectrics. Size-dependent thermal conductivity values are also computed based on steady-state temperature distributions obtained from the numerical models. For each case, reducing feature size into the subcontinuum regime decreases the thermal conductivity when compared to bulk values. Overall, simulations that consider phonon dispersion yield results more consistent with experimental correlations.
    keyword(s): Thin films , Temperature , Phonons , Thermal conductivity , Silicon , Lattice Boltzmann methods , Conductivity , Microelectronic devices , Equations AND Modeling ,
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      Lattice Boltzmann Modeling of Subcontinuum Energy Transport in Crystalline and Amorphous Microelectronic Devices

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    http://yetl.yabesh.ir/yetl1/handle/yetl/133540
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    contributor authorRodrigo Escobar
    contributor authorBrian Smith
    contributor authorCristina Amon
    date accessioned2017-05-09T00:19:36Z
    date available2017-05-09T00:19:36Z
    date copyrightJune, 2006
    date issued2006
    identifier issn1528-9044
    identifier otherJEPAE4-26263#115_1.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/133540
    description abstractNumerical simulations of time-dependent energy transport in semiconductor thin films are performed using the lattice Boltzmann method applied to phonon transport. The discrete lattice Boltzmann method is derived from the continuous Boltzmann transport equation assuming first gray dispersion and then nonlinear, frequency-dependent phonon dispersion for acoustic and optical phonons. Results indicate that a transition from diffusive to ballistic energy transport is found as the characteristic length of the system becomes comparable to the phonon mean free path. The methodology is used in representative microelectronics applications covering both crystalline and amorphous materials including silicon thin films and nanoporous silica dielectrics. Size-dependent thermal conductivity values are also computed based on steady-state temperature distributions obtained from the numerical models. For each case, reducing feature size into the subcontinuum regime decreases the thermal conductivity when compared to bulk values. Overall, simulations that consider phonon dispersion yield results more consistent with experimental correlations.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleLattice Boltzmann Modeling of Subcontinuum Energy Transport in Crystalline and Amorphous Microelectronic Devices
    typeJournal Paper
    journal volume128
    journal issue2
    journal titleJournal of Electronic Packaging
    identifier doi10.1115/1.2188951
    journal fristpage115
    journal lastpage124
    identifier eissn1043-7398
    keywordsThin films
    keywordsTemperature
    keywordsPhonons
    keywordsThermal conductivity
    keywordsSilicon
    keywordsLattice Boltzmann methods
    keywordsConductivity
    keywordsMicroelectronic devices
    keywordsEquations AND Modeling
    treeJournal of Electronic Packaging:;2006:;volume( 128 ):;issue: 002
    contenttypeFulltext
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