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    A Novel High Performance Die Attach for Ceramic Packages

    Source: Journal of Electronic Packaging:;2000:;volume( 122 ):;issue: 002::page 168
    Author:
    J. Z. Shi
    ,
    F. Stubhan
    ,
    J. Freytag
    ,
    X. M. Xie
    DOI: 10.1115/1.483150
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: A novel two-step process based on isothermal solidification is developed for die attachment of ceramic package. With a simple design of the multilayer system, silicon chip could be bonded onto the allumina substrate in between 200°C and 300°C. The total process time is less than 15 seconds during which the actual assembly time is within one second. Most of the samples can pass the shear strength test specified by MIL STD 883D. All the samples could pass 1750 cycles between −55°C and 125°C with slight degradation in die shear strength after the test. The microstructures of the bonds are characterized with metallographical investigation. Comparisons are made between the present technique and the Au/Si eutectic bonding. [S1043-7398(00)01202-0]
    keyword(s): Temperature , Ceramics , Bonding , Cycles , Project tasks , Solidification , Shear strength AND Silicon chips ,
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      A Novel High Performance Die Attach for Ceramic Packages

    URI
    http://yetl.yabesh.ir/yetl1/handle/yetl/123564
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    contributor authorJ. Z. Shi
    contributor authorF. Stubhan
    contributor authorJ. Freytag
    contributor authorX. M. Xie
    date accessioned2017-05-09T00:02:12Z
    date available2017-05-09T00:02:12Z
    date copyrightJune, 2000
    date issued2000
    identifier issn1528-9044
    identifier otherJEPAE4-26181#168_1.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/123564
    description abstractA novel two-step process based on isothermal solidification is developed for die attachment of ceramic package. With a simple design of the multilayer system, silicon chip could be bonded onto the allumina substrate in between 200°C and 300°C. The total process time is less than 15 seconds during which the actual assembly time is within one second. Most of the samples can pass the shear strength test specified by MIL STD 883D. All the samples could pass 1750 cycles between −55°C and 125°C with slight degradation in die shear strength after the test. The microstructures of the bonds are characterized with metallographical investigation. Comparisons are made between the present technique and the Au/Si eutectic bonding. [S1043-7398(00)01202-0]
    publisherThe American Society of Mechanical Engineers (ASME)
    titleA Novel High Performance Die Attach for Ceramic Packages
    typeJournal Paper
    journal volume122
    journal issue2
    journal titleJournal of Electronic Packaging
    identifier doi10.1115/1.483150
    journal fristpage168
    journal lastpage171
    identifier eissn1043-7398
    keywordsTemperature
    keywordsCeramics
    keywordsBonding
    keywordsCycles
    keywordsProject tasks
    keywordsSolidification
    keywordsShear strength AND Silicon chips
    treeJournal of Electronic Packaging:;2000:;volume( 122 ):;issue: 002
    contenttypeFulltext
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    DSpace software copyright © 2002-2015  DuraSpace
    نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
    yabeshDSpacePersian