contributor author | K. Sasagawa | |
contributor author | H. Abé | |
contributor author | N. Nakamura | |
contributor author | M. Saka | |
date accessioned | 2017-05-08T23:56:13Z | |
date available | 2017-05-08T23:56:13Z | |
date copyright | December, 1998 | |
date issued | 1998 | |
identifier issn | 1528-9044 | |
identifier other | JEPAE4-26169#360_1.pdf | |
identifier uri | http://yetl.yabesh.ir/yetl/handle/yetl/120234 | |
description abstract | In this paper, a new calculation method of the atomic flux divergence used to predict the formation of electromigration-induced void is proposed by considering two-dimensional distributions of current density and temperature and also simply considering the line structure of not only polycrystalline, but also bamboo line. For the verification, electromigration phenomenon near the corner of an angled polycrystalline line, which results in two-dimensional distributions of current density and temperature, is treated as an example. The usefulness of the proposed method is discussed in the light of the comparison of prediction of void formation near the corner with the experimental result. | |
publisher | The American Society of Mechanical Engineers (ASME) | |
title | A New Approach to Calculate Atomic Flux Divergence by Electromigration | |
type | Journal Paper | |
journal volume | 120 | |
journal issue | 4 | |
journal title | Journal of Electronic Packaging | |
identifier doi | 10.1115/1.2792647 | |
journal fristpage | 360 | |
journal lastpage | 366 | |
identifier eissn | 1043-7398 | |
keywords | Electrodiffusion | |
keywords | Corners (Structural elements) | |
keywords | Current density AND Temperature | |
tree | Journal of Electronic Packaging:;1998:;volume( 120 ):;issue: 004 | |
contenttype | Fulltext | |