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contributor authorK. Sasagawa
contributor authorH. Abé
contributor authorN. Nakamura
contributor authorM. Saka
date accessioned2017-05-08T23:56:13Z
date available2017-05-08T23:56:13Z
date copyrightDecember, 1998
date issued1998
identifier issn1528-9044
identifier otherJEPAE4-26169#360_1.pdf
identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/120234
description abstractIn this paper, a new calculation method of the atomic flux divergence used to predict the formation of electromigration-induced void is proposed by considering two-dimensional distributions of current density and temperature and also simply considering the line structure of not only polycrystalline, but also bamboo line. For the verification, electromigration phenomenon near the corner of an angled polycrystalline line, which results in two-dimensional distributions of current density and temperature, is treated as an example. The usefulness of the proposed method is discussed in the light of the comparison of prediction of void formation near the corner with the experimental result.
publisherThe American Society of Mechanical Engineers (ASME)
titleA New Approach to Calculate Atomic Flux Divergence by Electromigration
typeJournal Paper
journal volume120
journal issue4
journal titleJournal of Electronic Packaging
identifier doi10.1115/1.2792647
journal fristpage360
journal lastpage366
identifier eissn1043-7398
keywordsElectrodiffusion
keywordsCorners (Structural elements)
keywordsCurrent density AND Temperature
treeJournal of Electronic Packaging:;1998:;volume( 120 ):;issue: 004
contenttypeFulltext


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