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contributor authorWang, Jun
contributor authorZhao, Yang
contributor authorChen, Han
contributor authorTang, Yan
contributor authorLiu, Guozhen
contributor authorLiang, Renli
contributor authorDai, Jiangnan
contributor authorChen, Changqing
contributor authorKang, Junyong
contributor authorCai, Duanjun
date accessioned2022-02-04T14:33:46Z
date available2022-02-04T14:33:46Z
date copyright2020/04/17/
date issued2020
identifier issn1043-7398
identifier otherep_142_03_031102.pdf
identifier urihttp://yetl.yabesh.ir/yetl1/handle/yetl/4273917
description abstractWe demonstrate a novel ultraviolet (UV) light irradiation strategy to rapidly weld Cu nanowires (NWs) network and remove the organic residues for transparent electrodes. Shortly irradiated by UV light source, the Cu NWs could achieve junction welding in the absence of any thermal annealing process. This Cu NWs network shows high optoelectronic performance (39 Ω/sq at 90% transmittance at 550 nm) and outstanding flexibility under bending and twisting. Completely transparent light-emitting diode (LED) chips array was fabricated and has been lighted with bright top-surface emission. This method could provide a fast and convenient way to fabricate Cu NWs transparent electrodes onto various optoelectronic products.
publisherThe American Society of Mechanical Engineers (ASME)
titleRapid Anneal-Free Welding of Cu Nanowires Network by Ultraviolet Light Irradiation for Transparent Electrodes in Optoelectronic Applications
typeJournal Paper
journal volume142
journal issue3
journal titleJournal of Electronic Packaging
identifier doi10.1115/1.4046764
page31102
treeJournal of Electronic Packaging:;2020:;volume( 142 ):;issue: 003
contenttypeFulltext


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