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    Power and Thermal Constraints-Driven Modeling and Optimization for Through Silicon Via-Based Power Distribution Network

    Source: Journal of Electronic Packaging:;2018:;volume( 140 ):;issue: 004::page 41002
    Author:
    Zhu, Weijun
    ,
    Dong, Gang
    ,
    Yang, Yintang
    DOI: 10.1115/1.4040670
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: The design of three-dimensional (3D) power delivery network (PDN) is constrained by both power and thermal integrity. Through-silicon via (TSV) as an important part of transmission power and heat in stack, the rational design of TSV layout is particularly important. Using minimal TSV area to achieve the required 3D PDN is significant to reduce manufacturing costs and increase integration. In this paper, we propose electrical and thermal models of 3D PDN, respectively, and we use them to solve the 3D voltage drop and temperature distribution problems. The accuracy and efficiency of our proposed methods are demonstrated by simulation measurement. Combining these two methods, a layer-based optimization solution is developed and allows us to adjust the TSV density for different layers while satisfying the global power and thermal constraints. This optimization is scalable and has the same guiding value for multichip stacks with different functions and constraints. A setup of four-chip stack is used to demonstrate the feasibility of this optimization and a large TSV area saving is achieved by this method.
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      Power and Thermal Constraints-Driven Modeling and Optimization for Through Silicon Via-Based Power Distribution Network

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    http://yetl.yabesh.ir/yetl1/handle/yetl/4254187
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    contributor authorZhu, Weijun
    contributor authorDong, Gang
    contributor authorYang, Yintang
    date accessioned2019-02-28T11:14:27Z
    date available2019-02-28T11:14:27Z
    date copyright8/3/2018 12:00:00 AM
    date issued2018
    identifier issn1043-7398
    identifier otherep_140_04_041002.pdf
    identifier urihttp://yetl.yabesh.ir/yetl1/handle/yetl/4254187
    description abstractThe design of three-dimensional (3D) power delivery network (PDN) is constrained by both power and thermal integrity. Through-silicon via (TSV) as an important part of transmission power and heat in stack, the rational design of TSV layout is particularly important. Using minimal TSV area to achieve the required 3D PDN is significant to reduce manufacturing costs and increase integration. In this paper, we propose electrical and thermal models of 3D PDN, respectively, and we use them to solve the 3D voltage drop and temperature distribution problems. The accuracy and efficiency of our proposed methods are demonstrated by simulation measurement. Combining these two methods, a layer-based optimization solution is developed and allows us to adjust the TSV density for different layers while satisfying the global power and thermal constraints. This optimization is scalable and has the same guiding value for multichip stacks with different functions and constraints. A setup of four-chip stack is used to demonstrate the feasibility of this optimization and a large TSV area saving is achieved by this method.
    publisherThe American Society of Mechanical Engineers (ASME)
    titlePower and Thermal Constraints-Driven Modeling and Optimization for Through Silicon Via-Based Power Distribution Network
    typeJournal Paper
    journal volume140
    journal issue4
    journal titleJournal of Electronic Packaging
    identifier doi10.1115/1.4040670
    journal fristpage41002
    journal lastpage041002-10
    treeJournal of Electronic Packaging:;2018:;volume( 140 ):;issue: 004
    contenttypeFulltext
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    DSpace software copyright © 2002-2015  DuraSpace
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