Raman and Infrared Thermometry for Microsystems

Abstract

This paper reports and compares Raman and infrared thermometry measurements along the legs and on the shuttle of a SOI (silicon on insulator) bentbeam thermal microactuator. Raman thermometry offers micron spatial resolution and measurement uncertainties of آ±10 K. Typical data collection times are a minute per location leading to measurement times on the order of hours for a complete temperature profile. Infrared thermometry obtains a fullfield measurement so the data collection time is on the order of a minute. The spatial resolution is determined by the pixel size, 25 خ¼m by 25 خ¼m for the system used, and infrared thermometry also has uncertainties of آ±10 K after calibration with a nonpackaged sample. The Raman and infrared measured temperatures agreed both qualitatively and quantitatively. For example, when the thermal microactuator was operated at 7 V, the peak temperature on an interior leg is 437 K آ±â€‰10 K and 433 K آ±â€‰10 K from Raman and infrared thermometry, respectively. The two techniques are complementary for microsystems characterization when infrared imaging obtains a fullfield temperature measurement and Raman thermometry interrogates regions for which higher spatial resolution is required.