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    Quantification of Thermal Resistance of Transient Liquid Phase Bonded Cu/Al/Cu Interfaces for Assembly of Cu Based Microchannel Heat Exchangers

    Source: Journal of Micro and Nano-Manufacturing:;2013:;volume( 001 ):;issue: 003::page 31001
    Author:
    Lu, Bin
    ,
    Chen, Ke
    ,
    Meng, W. J.
    ,
    Karki, Amar
    ,
    Jin, Rongying
    DOI: 10.1115/1.4024683
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: Transient liquid phase (TLP) bonding of Cu structures with a thin elemental Al intermediate bonding layer is being used to assemble Cubased, enclosed, microchannel heat exchangers (MHEs). The heterogeneous Cu/Al/Cu TLP bonding interface region, formed during the TLP bonding process, impacts heat transfer of the assembled MHE device. To evaluate the thermal resistance of TLP bonded Cu/Al/Cu interface regions, transient flash measurements were performed across bonding interface regions formed under various conditions, in combination with detailed structural examination and measurements of bulk mass density and specific heat. The flash method is shown to yield quantitative measurements of interfacial thermal resistance values. Our results provide guidance to developing bonding protocols for Cubased MHEs with optimized heat transfer performance.
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      Quantification of Thermal Resistance of Transient Liquid Phase Bonded Cu/Al/Cu Interfaces for Assembly of Cu Based Microchannel Heat Exchangers

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    http://yetl.yabesh.ir/yetl1/handle/yetl/152870
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    • Journal of Micro and Nano

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    contributor authorLu, Bin
    contributor authorChen, Ke
    contributor authorMeng, W. J.
    contributor authorKarki, Amar
    contributor authorJin, Rongying
    date accessioned2017-05-09T01:01:48Z
    date available2017-05-09T01:01:48Z
    date issued2013
    identifier issn2166-0468
    identifier otherjmnm_001_03_031001.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/152870
    description abstractTransient liquid phase (TLP) bonding of Cu structures with a thin elemental Al intermediate bonding layer is being used to assemble Cubased, enclosed, microchannel heat exchangers (MHEs). The heterogeneous Cu/Al/Cu TLP bonding interface region, formed during the TLP bonding process, impacts heat transfer of the assembled MHE device. To evaluate the thermal resistance of TLP bonded Cu/Al/Cu interface regions, transient flash measurements were performed across bonding interface regions formed under various conditions, in combination with detailed structural examination and measurements of bulk mass density and specific heat. The flash method is shown to yield quantitative measurements of interfacial thermal resistance values. Our results provide guidance to developing bonding protocols for Cubased MHEs with optimized heat transfer performance.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleQuantification of Thermal Resistance of Transient Liquid Phase Bonded Cu/Al/Cu Interfaces for Assembly of Cu Based Microchannel Heat Exchangers
    typeJournal Paper
    journal volume1
    journal issue3
    journal titleJournal of Micro and Nano
    identifier doi10.1115/1.4024683
    journal fristpage31001
    journal lastpage31001
    identifier eissn1932-619X
    treeJournal of Micro and Nano-Manufacturing:;2013:;volume( 001 ):;issue: 003
    contenttypeFulltext
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    DSpace software copyright © 2002-2015  DuraSpace
    نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
    yabeshDSpacePersian