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contributor authorLu, Bin
contributor authorChen, Ke
contributor authorMeng, W. J.
contributor authorKarki, Amar
contributor authorJin, Rongying
date accessioned2017-05-09T01:01:48Z
date available2017-05-09T01:01:48Z
date issued2013
identifier issn2166-0468
identifier otherjmnm_001_03_031001.pdf
identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/152870
description abstractTransient liquid phase (TLP) bonding of Cu structures with a thin elemental Al intermediate bonding layer is being used to assemble Cubased, enclosed, microchannel heat exchangers (MHEs). The heterogeneous Cu/Al/Cu TLP bonding interface region, formed during the TLP bonding process, impacts heat transfer of the assembled MHE device. To evaluate the thermal resistance of TLP bonded Cu/Al/Cu interface regions, transient flash measurements were performed across bonding interface regions formed under various conditions, in combination with detailed structural examination and measurements of bulk mass density and specific heat. The flash method is shown to yield quantitative measurements of interfacial thermal resistance values. Our results provide guidance to developing bonding protocols for Cubased MHEs with optimized heat transfer performance.
publisherThe American Society of Mechanical Engineers (ASME)
titleQuantification of Thermal Resistance of Transient Liquid Phase Bonded Cu/Al/Cu Interfaces for Assembly of Cu Based Microchannel Heat Exchangers
typeJournal Paper
journal volume1
journal issue3
journal titleJournal of Micro and Nano
identifier doi10.1115/1.4024683
journal fristpage31001
journal lastpage31001
identifier eissn1932-619X
treeJournal of Micro and Nano-Manufacturing:;2013:;volume( 001 ):;issue: 003
contenttypeFulltext


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