YaBeSH Engineering and Technology Library

    • Journals
    • PaperQuest
    • YSE Standards
    • YaBeSH
    • Login
    View Item 
    •   YE&T Library
    • ASME
    • Journal of Electronic Packaging
    • View Item
    •   YE&T Library
    • ASME
    • Journal of Electronic Packaging
    • View Item
    • All Fields
    • Source Title
    • Year
    • Publisher
    • Title
    • Subject
    • Author
    • DOI
    • ISBN
    Advanced Search
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Archive

    Minimization of the Local Residual Stress in 3D Flip Chip Structures by Optimizing the Mechanical Properties of Electroplated Materials and the Alignment Structure of TSVs and Fine Bumps

    Source: Journal of Electronic Packaging:;2012:;volume( 134 ):;issue: 002::page 21006
    Author:
    Kota Nakahira
    ,
    Ken Suzuki
    ,
    Hideo Miura
    ,
    Hironori Tago
    ,
    Fumiaki Endo
    DOI: 10.1115/1.4006142
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: Since the thickness of stacked silicon chips in 3D integration has been thinned to less than 100 μm, the local thermal deformation of the chips has increased drastically because of the decrease of the flexural rigidity of the thinned chips. The clear periodic thermal deformation and thus, the local distribution of thermal residual stress appears in the stacked chips due to the periodic alignment of metallic bumps, and they sometimes deteriorate mechanical and electrical reliability of electronic products. In this paper, the dominant structural factors of the local residual stress in a silicon chip are investigated quantitatively based on the results of a three-dimensional finite element analysis and the measurement of the local residual stress in a chip using stress sensor chips. The piezoresistive strain gauges were embedded in the sensor chips. The length of each gauge was 2 μm, and an unit cell consisted of four gauges with different crystallographic directions. This alignment of the strain gauges enables us to measure the tensor component of three-dimensional stress fields separately. Test flip chip substrates were made of silicon chip on which the area-arrayed tin/copper bumps were electroplated. The width of a bump was fixed at 200 μm, and the bump pitch was varied from 400 μm to 1000 μm. The thickness of the copper bump was about 40 μm and that of tin layer was about 10 μm. This tin layer was used for the formation of rigid joint by alloying it with copper interconnection formed on a stress sensing chip. The measured amplitude of the residual stress increased from about 30 MPa to 250 MPa depending on the combination of materials such as bump, underfill, and interconnections. It was confirmed that both the material constant of underfill and the alignment structure of fine bumps are the dominant factors of the local deformation and stress of a silicon chip mounted on area-arrayed metallic bumps. It was also confirmed that not only the control of mechanical properties of electroplated copper thin films, but also the hound’s-tooth alignment of a through silicon via and a bump are indispensable for minimizing the packaging-induced stress in the three-dimensionally mounted chips. This test chip is very effective for evaluating the packaging-process-induced stress in 3D stacked chips quantitatively.
    keyword(s): Stress , Silicon chips , Mechanical properties , Flip-chip , Deformation AND Copper ,
    • Download: (2.096Mb)
    • Show Full MetaData Hide Full MetaData
    • Get RIS
    • Item Order
    • Go To Publisher
    • Price: 5000 Rial
    • Statistics

      Minimization of the Local Residual Stress in 3D Flip Chip Structures by Optimizing the Mechanical Properties of Electroplated Materials and the Alignment Structure of TSVs and Fine Bumps

    URI
    http://yetl.yabesh.ir/yetl1/handle/yetl/148597
    Collections
    • Journal of Electronic Packaging

    Show full item record

    contributor authorKota Nakahira
    contributor authorKen Suzuki
    contributor authorHideo Miura
    contributor authorHironori Tago
    contributor authorFumiaki Endo
    date accessioned2017-05-09T00:49:32Z
    date available2017-05-09T00:49:32Z
    date copyrightJune, 2012
    date issued2012
    identifier issn1528-9044
    identifier otherJEPAE4-26326#021006_1.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/148597
    description abstractSince the thickness of stacked silicon chips in 3D integration has been thinned to less than 100 μm, the local thermal deformation of the chips has increased drastically because of the decrease of the flexural rigidity of the thinned chips. The clear periodic thermal deformation and thus, the local distribution of thermal residual stress appears in the stacked chips due to the periodic alignment of metallic bumps, and they sometimes deteriorate mechanical and electrical reliability of electronic products. In this paper, the dominant structural factors of the local residual stress in a silicon chip are investigated quantitatively based on the results of a three-dimensional finite element analysis and the measurement of the local residual stress in a chip using stress sensor chips. The piezoresistive strain gauges were embedded in the sensor chips. The length of each gauge was 2 μm, and an unit cell consisted of four gauges with different crystallographic directions. This alignment of the strain gauges enables us to measure the tensor component of three-dimensional stress fields separately. Test flip chip substrates were made of silicon chip on which the area-arrayed tin/copper bumps were electroplated. The width of a bump was fixed at 200 μm, and the bump pitch was varied from 400 μm to 1000 μm. The thickness of the copper bump was about 40 μm and that of tin layer was about 10 μm. This tin layer was used for the formation of rigid joint by alloying it with copper interconnection formed on a stress sensing chip. The measured amplitude of the residual stress increased from about 30 MPa to 250 MPa depending on the combination of materials such as bump, underfill, and interconnections. It was confirmed that both the material constant of underfill and the alignment structure of fine bumps are the dominant factors of the local deformation and stress of a silicon chip mounted on area-arrayed metallic bumps. It was also confirmed that not only the control of mechanical properties of electroplated copper thin films, but also the hound’s-tooth alignment of a through silicon via and a bump are indispensable for minimizing the packaging-induced stress in the three-dimensionally mounted chips. This test chip is very effective for evaluating the packaging-process-induced stress in 3D stacked chips quantitatively.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleMinimization of the Local Residual Stress in 3D Flip Chip Structures by Optimizing the Mechanical Properties of Electroplated Materials and the Alignment Structure of TSVs and Fine Bumps
    typeJournal Paper
    journal volume134
    journal issue2
    journal titleJournal of Electronic Packaging
    identifier doi10.1115/1.4006142
    journal fristpage21006
    identifier eissn1043-7398
    keywordsStress
    keywordsSilicon chips
    keywordsMechanical properties
    keywordsFlip-chip
    keywordsDeformation AND Copper
    treeJournal of Electronic Packaging:;2012:;volume( 134 ):;issue: 002
    contenttypeFulltext
    DSpace software copyright © 2002-2015  DuraSpace
    نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
    yabeshDSpacePersian
     
    DSpace software copyright © 2002-2015  DuraSpace
    نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
    yabeshDSpacePersian