Die Bonding of High Power 808 nm Laser Diodes With Nanosilver PasteSource: Journal of Electronic Packaging:;2012:;volume( 134 ):;issue: 004::page 41003DOI: 10.1115/1.4007271Publisher: The American Society of Mechanical Engineers (ASME)
Abstract: Conduction-cooled high power laser diodes have a variety of significant commercial, industrial, and military applications. For these devices to perform effectively, an appropriate die-attached material meeting specific requirements must be selected. In this study, nanosilver paste, a novel die-attached material, was used in packaging the 60 W 808 nm high power laser diodes. The properties of the laser diodes operating in the continuous wave (CW) mode, including the characteristics of power–current–voltage (LIV), spectrum, near field, far field, near field linearity, spatial spectrum, and thermal impedance, were determined. In addition, destructive tests, including the die shear test, scanning acoustic microscopy, and the thermal rollover test, were conducted to evaluate the reliability of the die bonding of the 60 W 808 nm high power semiconductor laser with nanosilver paste. Thermal analyses of the laser diodes operating at CW mode with different die-attached materials, indium solder, gold–tin solder and nanosilver paste, were conducted by finite element analysis (FEA). According to the result of the FEA, the nanosilver paste resulted in the lowest temperature in the laser diodes. The test results showed that the nanosilver paste was a very promising die-attached material in packaging high power semiconductor laser.
keyword(s): Lasers , Bonding AND High power lasers ,
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contributor author | Yi Yan | |
contributor author | Xu Chen | |
contributor author | Xingsheng Liu | |
contributor author | Yunhui Mei | |
contributor author | Guo-Quan Lu | |
date accessioned | 2017-05-09T00:49:22Z | |
date available | 2017-05-09T00:49:22Z | |
date copyright | 41244 | |
date issued | 2012 | |
identifier issn | 1528-9044 | |
identifier other | JEPAE4-926513#ep_134_4_041003.pdf | |
identifier uri | http://yetl.yabesh.ir/yetl/handle/yetl/148562 | |
description abstract | Conduction-cooled high power laser diodes have a variety of significant commercial, industrial, and military applications. For these devices to perform effectively, an appropriate die-attached material meeting specific requirements must be selected. In this study, nanosilver paste, a novel die-attached material, was used in packaging the 60 W 808 nm high power laser diodes. The properties of the laser diodes operating in the continuous wave (CW) mode, including the characteristics of power–current–voltage (LIV), spectrum, near field, far field, near field linearity, spatial spectrum, and thermal impedance, were determined. In addition, destructive tests, including the die shear test, scanning acoustic microscopy, and the thermal rollover test, were conducted to evaluate the reliability of the die bonding of the 60 W 808 nm high power semiconductor laser with nanosilver paste. Thermal analyses of the laser diodes operating at CW mode with different die-attached materials, indium solder, gold–tin solder and nanosilver paste, were conducted by finite element analysis (FEA). According to the result of the FEA, the nanosilver paste resulted in the lowest temperature in the laser diodes. The test results showed that the nanosilver paste was a very promising die-attached material in packaging high power semiconductor laser. | |
publisher | The American Society of Mechanical Engineers (ASME) | |
title | Die Bonding of High Power 808 nm Laser Diodes With Nanosilver Paste | |
type | Journal Paper | |
journal volume | 134 | |
journal issue | 4 | |
journal title | Journal of Electronic Packaging | |
identifier doi | 10.1115/1.4007271 | |
journal fristpage | 41003 | |
identifier eissn | 1043-7398 | |
keywords | Lasers | |
keywords | Bonding AND High power lasers | |
tree | Journal of Electronic Packaging:;2012:;volume( 134 ):;issue: 004 | |
contenttype | Fulltext |