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    Evaluation of Stress Effects on Electrical Characteristics of N-Type MOSFETs: Variations of DC Characteristics During the Resin-Molding Process

    Source: Journal of Electronic Packaging:;2010:;volume( 132 ):;issue: 001::page 11003
    Author:
    Masaaki Koganemaru
    ,
    Toru Ikeda
    ,
    Hajime Tomokage
    ,
    Noriyuki Miyazaki
    DOI: 10.1115/1.4000718
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: Stress-induced changes in the electrical characteristics of a semiconductor device become a major concern in the production of semiconductor packages because the electrical characteristics are adversely affected by packaging (residual) stresses. The objective of our project is to evaluate the effects of stress on semiconductor devices. In this study, the shift of the DC characteristics of nMOSFETs during the resin-molding process was investigated experimentally. After a silicon chip including the n-type metal oxide semiconductor field effect transistors (nMOSFETs) was encapsulated in a quad flat package, the drain current variations and the transconductance shifts were measured. The drain current decreased during the resin-molding process while no significant shift in threshold voltage was observed. The experimental results were estimated adequately from the residual stress predicted by numerical and experimental analyses and from the stress-sensitivity of the nMOSFETs measured by the four-point bending method. Also, we tested the validity of an electron-mobility model that included the effect of stress. The electron-mobility model takes into account the variation in the relative occupancy of the electrons in each conduction-band energy valley. It was found that the effect of biaxial stress on the variation in electron-mobility can be qualitatively evaluated by the electron-mobility model but are quantitatively different from the experimental results. Several needed improvements to the electron-mobility model are proposed in this article.
    keyword(s): Stress , Molding , Electron mobility , Resins AND Silicon ,
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      Evaluation of Stress Effects on Electrical Characteristics of N-Type MOSFETs: Variations of DC Characteristics During the Resin-Molding Process

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    http://yetl.yabesh.ir/yetl1/handle/yetl/142970
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    contributor authorMasaaki Koganemaru
    contributor authorToru Ikeda
    contributor authorHajime Tomokage
    contributor authorNoriyuki Miyazaki
    date accessioned2017-05-09T00:37:15Z
    date available2017-05-09T00:37:15Z
    date copyrightMarch, 2010
    date issued2010
    identifier issn1528-9044
    identifier otherJEPAE4-26302#011003_1.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/142970
    description abstractStress-induced changes in the electrical characteristics of a semiconductor device become a major concern in the production of semiconductor packages because the electrical characteristics are adversely affected by packaging (residual) stresses. The objective of our project is to evaluate the effects of stress on semiconductor devices. In this study, the shift of the DC characteristics of nMOSFETs during the resin-molding process was investigated experimentally. After a silicon chip including the n-type metal oxide semiconductor field effect transistors (nMOSFETs) was encapsulated in a quad flat package, the drain current variations and the transconductance shifts were measured. The drain current decreased during the resin-molding process while no significant shift in threshold voltage was observed. The experimental results were estimated adequately from the residual stress predicted by numerical and experimental analyses and from the stress-sensitivity of the nMOSFETs measured by the four-point bending method. Also, we tested the validity of an electron-mobility model that included the effect of stress. The electron-mobility model takes into account the variation in the relative occupancy of the electrons in each conduction-band energy valley. It was found that the effect of biaxial stress on the variation in electron-mobility can be qualitatively evaluated by the electron-mobility model but are quantitatively different from the experimental results. Several needed improvements to the electron-mobility model are proposed in this article.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleEvaluation of Stress Effects on Electrical Characteristics of N-Type MOSFETs: Variations of DC Characteristics During the Resin-Molding Process
    typeJournal Paper
    journal volume132
    journal issue1
    journal titleJournal of Electronic Packaging
    identifier doi10.1115/1.4000718
    journal fristpage11003
    identifier eissn1043-7398
    keywordsStress
    keywordsMolding
    keywordsElectron mobility
    keywordsResins AND Silicon
    treeJournal of Electronic Packaging:;2010:;volume( 132 ):;issue: 001
    contenttypeFulltext
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    DSpace software copyright © 2002-2015  DuraSpace
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