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    Analysis of One-Dimensional and Two-Dimensional Thin Film “Pull-in” Phenomena Under the Influence of an Electrostatic Potential

    Source: Journal of Applied Mechanics:;2007:;volume( 074 ):;issue: 005::page 927
    Author:
    Gang Duan
    ,
    Kai-Tak Wan
    DOI: 10.1115/1.2722311
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: A thin one-dimensional rectangular or two-dimensional axisymmetric film is clamped at the perimeter. An electrostatic potential (V0*) applied to a pad directly underneath the film leads to a “pull-in” phenomenon. The electromagnetic energy stored in the capacitive film-pad dielectric gap is decoupled from the mechanical deformation of the film using the Dugdale-Barenblatt-Maugis cohesive zone approximation. The ratio of film-pad gap (g) to film thickness (h), or, γ=g∕h, is found to play a crucial role in the electromechanical behavior of the film. Solution spanning a wide range of γ is found such that V0*∝γ3∕2 for γ<0.5 and V0*∝γ5∕2 for γ>5. The new model leads to new design criteria for MEMS-RF-switches.
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      Analysis of One-Dimensional and Two-Dimensional Thin Film “Pull-in” Phenomena Under the Influence of an Electrostatic Potential

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    http://yetl.yabesh.ir/yetl1/handle/yetl/135062
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    contributor authorGang Duan
    contributor authorKai-Tak Wan
    date accessioned2017-05-09T00:22:24Z
    date available2017-05-09T00:22:24Z
    date copyrightSeptember, 2007
    date issued2007
    identifier issn0021-8936
    identifier otherJAMCAV-26656#927_1.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/135062
    description abstractA thin one-dimensional rectangular or two-dimensional axisymmetric film is clamped at the perimeter. An electrostatic potential (V0*) applied to a pad directly underneath the film leads to a “pull-in” phenomenon. The electromagnetic energy stored in the capacitive film-pad dielectric gap is decoupled from the mechanical deformation of the film using the Dugdale-Barenblatt-Maugis cohesive zone approximation. The ratio of film-pad gap (g) to film thickness (h), or, γ=g∕h, is found to play a crucial role in the electromechanical behavior of the film. Solution spanning a wide range of γ is found such that V0*∝γ3∕2 for γ<0.5 and V0*∝γ5∕2 for γ>5. The new model leads to new design criteria for MEMS-RF-switches.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleAnalysis of One-Dimensional and Two-Dimensional Thin Film “Pull-in” Phenomena Under the Influence of an Electrostatic Potential
    typeJournal Paper
    journal volume74
    journal issue5
    journal titleJournal of Applied Mechanics
    identifier doi10.1115/1.2722311
    journal fristpage927
    journal lastpage934
    identifier eissn1528-9036
    treeJournal of Applied Mechanics:;2007:;volume( 074 ):;issue: 005
    contenttypeFulltext
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