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    RIE-Texturing of Industrial Multicrystalline Silicon Solar Cells

    Source: Journal of Solar Energy Engineering:;2005:;volume( 127 ):;issue: 001::page 146
    Author:
    Douglas S. Ruby
    ,
    Saleem Zaidi
    ,
    S. Narayanan
    ,
    Satoshi Yamanaka
    ,
    Ruben Balanga
    DOI: 10.1115/1.1756926
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: We developed a maskless plasma texturing technique for multicrystalline Si (mc-Si) cells using Reactive Ion Etching (RIE) that results in higher cell performance than that of standard untextured cells. Elimination of plasma damage has been achieved while keeping front reflectance to low levels. Internal quantum efficiencies higher than those on planar and wet-textured cells have been obtained, boosting cell currents and efficiencies by up to 6% on tricrystalline Si cells.
    keyword(s): Semiconductor wafers , Plasmas (Ionized gases) , Reflectance , Texture (Materials) , Etching , Silicon , Solar cells , Wavelength , Solar energy AND Current ,
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      RIE-Texturing of Industrial Multicrystalline Silicon Solar Cells

    URI
    http://yetl.yabesh.ir/yetl1/handle/yetl/132637
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    contributor authorDouglas S. Ruby
    contributor authorSaleem Zaidi
    contributor authorS. Narayanan
    contributor authorSatoshi Yamanaka
    contributor authorRuben Balanga
    date accessioned2017-05-09T00:17:51Z
    date available2017-05-09T00:17:51Z
    date copyrightFebruary, 2005
    date issued2005
    identifier issn0199-6231
    identifier otherJSEEDO-28367#146_1.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/132637
    description abstractWe developed a maskless plasma texturing technique for multicrystalline Si (mc-Si) cells using Reactive Ion Etching (RIE) that results in higher cell performance than that of standard untextured cells. Elimination of plasma damage has been achieved while keeping front reflectance to low levels. Internal quantum efficiencies higher than those on planar and wet-textured cells have been obtained, boosting cell currents and efficiencies by up to 6% on tricrystalline Si cells.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleRIE-Texturing of Industrial Multicrystalline Silicon Solar Cells
    typeJournal Paper
    journal volume127
    journal issue1
    journal titleJournal of Solar Energy Engineering
    identifier doi10.1115/1.1756926
    journal fristpage146
    journal lastpage149
    identifier eissn1528-8986
    keywordsSemiconductor wafers
    keywordsPlasmas (Ionized gases)
    keywordsReflectance
    keywordsTexture (Materials)
    keywordsEtching
    keywordsSilicon
    keywordsSolar cells
    keywordsWavelength
    keywordsSolar energy AND Current
    treeJournal of Solar Energy Engineering:;2005:;volume( 127 ):;issue: 001
    contenttypeFulltext
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    DSpace software copyright © 2002-2015  DuraSpace
    نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
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