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contributor authorDouglas S. Ruby
contributor authorSaleem Zaidi
contributor authorS. Narayanan
contributor authorSatoshi Yamanaka
contributor authorRuben Balanga
date accessioned2017-05-09T00:17:51Z
date available2017-05-09T00:17:51Z
date copyrightFebruary, 2005
date issued2005
identifier issn0199-6231
identifier otherJSEEDO-28367#146_1.pdf
identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/132637
description abstractWe developed a maskless plasma texturing technique for multicrystalline Si (mc-Si) cells using Reactive Ion Etching (RIE) that results in higher cell performance than that of standard untextured cells. Elimination of plasma damage has been achieved while keeping front reflectance to low levels. Internal quantum efficiencies higher than those on planar and wet-textured cells have been obtained, boosting cell currents and efficiencies by up to 6% on tricrystalline Si cells.
publisherThe American Society of Mechanical Engineers (ASME)
titleRIE-Texturing of Industrial Multicrystalline Silicon Solar Cells
typeJournal Paper
journal volume127
journal issue1
journal titleJournal of Solar Energy Engineering
identifier doi10.1115/1.1756926
journal fristpage146
journal lastpage149
identifier eissn1528-8986
keywordsSemiconductor wafers
keywordsPlasmas (Ionized gases)
keywordsReflectance
keywordsTexture (Materials)
keywordsEtching
keywordsSilicon
keywordsSolar cells
keywordsWavelength
keywordsSolar energy AND Current
treeJournal of Solar Energy Engineering:;2005:;volume( 127 ):;issue: 001
contenttypeFulltext


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