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    Interfacial Fracture Toughness Measurement of a Ti/Si Interface

    Source: Journal of Electronic Packaging:;2004:;volume( 126 ):;issue: 003::page 301
    Author:
    Mitul Modi
    ,
    Suresh K. Sitaraman
    DOI: 10.1115/1.1772410
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: Titanium adhesive layers are commonly used in microelectronic and MEMS applications to help improve the adhesion of other metal layers to a silicon substrate. Such Ti/Si interfaces could potentially delaminate under externally applied mechanical loads, thermally induced stresses, or process-induced intrinsic stresses or a combination of these different loads. In order to design against delamination, knowledge of the interfacial fracture toughness of the Ti/Si interface is necessary. However, interfacial fracture toughness data for such interfaces is not widely available in the open literature, in part due to the difficulty in measuring the strength of thin film interfaces. The Modified Decohesion Test (MDT), a new test developed by the authors, has been used to characterize the mode mix dependent interfacial fracture toughness of a Ti/Si interface. In this approach, a highly stressed super layer is used to drive delamination and generate any mode mix at the crack tip. MDT uses the change in crack surface area to vary the available energy per unit area for crack growth and thus to bound the interfacial fracture toughness. Therefore, this technique uses a single sample to measure the interfacial fracture toughness. Since the deformations remain elastic, a mechanics-based solution can be used to correlate test parameters to the energy release rate. Common IC fabrication techniques are used to prepare the sample and execute the test, thereby making the test compatible with current microelectronic or MEMS facilities. Using the MDT, interfacial fracture toughness (Γ) bounds were found for a Ti/Si interface at three mode mixes. At a mode mix of 19.5 deg, 5.97 J/m2≤Γ≤7.87 J/m2, at a mode mix of 23 deg, 9.32 J/m2≤Γ≤10.42 J/m2, and at a mode mix of 30 deg, 12.70 J/m2≤Γ≤17.02 J/m2.
    keyword(s): Stress , Fracture toughness , Titanium , Silicon AND Adhesives ,
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      Interfacial Fracture Toughness Measurement of a Ti/Si Interface

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    http://yetl.yabesh.ir/yetl1/handle/yetl/129849
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    contributor authorMitul Modi
    contributor authorSuresh K. Sitaraman
    date accessioned2017-05-09T00:12:42Z
    date available2017-05-09T00:12:42Z
    date copyrightSeptember, 2004
    date issued2004
    identifier issn1528-9044
    identifier otherJEPAE4-26235#301_1.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/129849
    description abstractTitanium adhesive layers are commonly used in microelectronic and MEMS applications to help improve the adhesion of other metal layers to a silicon substrate. Such Ti/Si interfaces could potentially delaminate under externally applied mechanical loads, thermally induced stresses, or process-induced intrinsic stresses or a combination of these different loads. In order to design against delamination, knowledge of the interfacial fracture toughness of the Ti/Si interface is necessary. However, interfacial fracture toughness data for such interfaces is not widely available in the open literature, in part due to the difficulty in measuring the strength of thin film interfaces. The Modified Decohesion Test (MDT), a new test developed by the authors, has been used to characterize the mode mix dependent interfacial fracture toughness of a Ti/Si interface. In this approach, a highly stressed super layer is used to drive delamination and generate any mode mix at the crack tip. MDT uses the change in crack surface area to vary the available energy per unit area for crack growth and thus to bound the interfacial fracture toughness. Therefore, this technique uses a single sample to measure the interfacial fracture toughness. Since the deformations remain elastic, a mechanics-based solution can be used to correlate test parameters to the energy release rate. Common IC fabrication techniques are used to prepare the sample and execute the test, thereby making the test compatible with current microelectronic or MEMS facilities. Using the MDT, interfacial fracture toughness (Γ) bounds were found for a Ti/Si interface at three mode mixes. At a mode mix of 19.5 deg, 5.97 J/m2≤Γ≤7.87 J/m2, at a mode mix of 23 deg, 9.32 J/m2≤Γ≤10.42 J/m2, and at a mode mix of 30 deg, 12.70 J/m2≤Γ≤17.02 J/m2.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleInterfacial Fracture Toughness Measurement of a Ti/Si Interface
    typeJournal Paper
    journal volume126
    journal issue3
    journal titleJournal of Electronic Packaging
    identifier doi10.1115/1.1772410
    journal fristpage301
    journal lastpage307
    identifier eissn1043-7398
    keywordsStress
    keywordsFracture toughness
    keywordsTitanium
    keywordsSilicon AND Adhesives
    treeJournal of Electronic Packaging:;2004:;volume( 126 ):;issue: 003
    contenttypeFulltext
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    DSpace software copyright © 2002-2015  DuraSpace
    نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
    yabeshDSpacePersian