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    Measurement of Wafer Surface Using Shadow Moiré Technique With Talbot Effect

    Source: Journal of Electronic Packaging:;1998:;volume( 120 ):;issue: 002::page 166
    Author:
    S. Wei
    ,
    S. Wu
    ,
    I. Kao
    ,
    F. P. Chiang
    DOI: 10.1115/1.2792612
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: In this paper, a modified shadow moiré technique is applied to measure surface topology of wafers. When a wafer is sliced, either by an inner-diameter (ID) saw or wiresaw, the surface needs to be measured to ensure the consistency of quality. Two important characteristics of the wafer surface measurements are the warpage and total thickness variation (TTV). Currently, the most commonly used method of wafer measurement employs a pair of capacitive measuring probes which sample points on the surface of a rotating wafer to obtain the contours of surface. Many sampling points on the surface are needed for more accurate measurements; however, this will require more time for the inspection of wafers during production. An innovative alternative for full-field, whole-wafer measurement is developed using a laser light source and the modified shadow moiré technique. This methodology enables one to examine the whole wafer surface quickly and simultaneously. In this study, a 40 lines/mm (1000 lines/inch) reference grating is employed as the standard to create a shadow moiré pattern. In addition, the Talbot effect is utilized to adjust the gap, or the so-called Talbot distance, between the grating and the wafer surface such that a fringe pattern of good quality can be obtained. By using the phase shifting technique, the resolution (or sensitivity) can be enhanced by two order of magnitude. The results show that not only the full view of the whole wafer surface can be obtained, but enhanced surface resolution and accuracy can also be realized. In addition, warpage due to excessive residual stresses can be observed distinctly with fringe patterns because of the global and interconnected moiré fringes. This process is faster, especially when dealing with wafers with diameter larger than 200 mm (8”). Experimental results of both 200 mm single crystalline and 100 × 90 mm polycrystalline wafers are presented. The system can also be fully automated to become an on-line inspection tool.
    keyword(s): Semiconductor wafers , Shades and shadows , Warping , Diffraction patterns , Resolution (Optics) , Measurement , Diffraction gratings , Inspection , Light sources , Residual stresses , Surface acoustic waves , Probes , Thickness , Topology , Sampling (Acoustical engineering) AND Lasers ,
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      Measurement of Wafer Surface Using Shadow Moiré Technique With Talbot Effect

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    http://yetl.yabesh.ir/yetl1/handle/yetl/120269
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    • Journal of Electronic Packaging

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    contributor authorS. Wei
    contributor authorS. Wu
    contributor authorI. Kao
    contributor authorF. P. Chiang
    date accessioned2017-05-08T23:56:17Z
    date available2017-05-08T23:56:17Z
    date copyrightJune, 1998
    date issued1998
    identifier issn1528-9044
    identifier otherJEPAE4-26166#166_1.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/120269
    description abstractIn this paper, a modified shadow moiré technique is applied to measure surface topology of wafers. When a wafer is sliced, either by an inner-diameter (ID) saw or wiresaw, the surface needs to be measured to ensure the consistency of quality. Two important characteristics of the wafer surface measurements are the warpage and total thickness variation (TTV). Currently, the most commonly used method of wafer measurement employs a pair of capacitive measuring probes which sample points on the surface of a rotating wafer to obtain the contours of surface. Many sampling points on the surface are needed for more accurate measurements; however, this will require more time for the inspection of wafers during production. An innovative alternative for full-field, whole-wafer measurement is developed using a laser light source and the modified shadow moiré technique. This methodology enables one to examine the whole wafer surface quickly and simultaneously. In this study, a 40 lines/mm (1000 lines/inch) reference grating is employed as the standard to create a shadow moiré pattern. In addition, the Talbot effect is utilized to adjust the gap, or the so-called Talbot distance, between the grating and the wafer surface such that a fringe pattern of good quality can be obtained. By using the phase shifting technique, the resolution (or sensitivity) can be enhanced by two order of magnitude. The results show that not only the full view of the whole wafer surface can be obtained, but enhanced surface resolution and accuracy can also be realized. In addition, warpage due to excessive residual stresses can be observed distinctly with fringe patterns because of the global and interconnected moiré fringes. This process is faster, especially when dealing with wafers with diameter larger than 200 mm (8”). Experimental results of both 200 mm single crystalline and 100 × 90 mm polycrystalline wafers are presented. The system can also be fully automated to become an on-line inspection tool.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleMeasurement of Wafer Surface Using Shadow Moiré Technique With Talbot Effect
    typeJournal Paper
    journal volume120
    journal issue2
    journal titleJournal of Electronic Packaging
    identifier doi10.1115/1.2792612
    journal fristpage166
    journal lastpage170
    identifier eissn1043-7398
    keywordsSemiconductor wafers
    keywordsShades and shadows
    keywordsWarping
    keywordsDiffraction patterns
    keywordsResolution (Optics)
    keywordsMeasurement
    keywordsDiffraction gratings
    keywordsInspection
    keywordsLight sources
    keywordsResidual stresses
    keywordsSurface acoustic waves
    keywordsProbes
    keywordsThickness
    keywordsTopology
    keywordsSampling (Acoustical engineering) AND Lasers
    treeJournal of Electronic Packaging:;1998:;volume( 120 ):;issue: 002
    contenttypeFulltext
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    DSpace software copyright © 2002-2015  DuraSpace
    نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
    yabeshDSpacePersian