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    Modeling Stresses of Contacts in Wire Saw Slicing of Polycrystalline and Crystalline Ingots: Application to Silicon Wafer Production

    Source: Journal of Electronic Packaging:;1998:;volume( 120 ):;issue: 002::page 123
    Author:
    J. Li
    ,
    I. Kao
    ,
    V. Prasad
    DOI: 10.1115/1.2792595
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: Wire saw slicing is a cost effective technology with high surface quality for slicing large diameter silicon wafers. Though wire saws have been deployed to cut polycrystalline and single crystal silicon ingot since the early 1990s, very little is known about the fundamental cutting process. We investigate this manufacturing process and propose a contact stress model of wire saw slicing that illustrates the interactions among the wire, ingot, and abrasives (e.g., SiC) carried by the slurry. Stresses created by wire saw slicing silicon wafers are analyzed in this paper. During the cutting process, the wire moves at high speed (5–15 m/s) with respect to the silicon ingot. The abrasives in the slurry are lose third-body particles caught between the wire and ingot at the contact surface. The forces applied by the wire carry the abrasive particles and cause them to roll on the surface and at the same time to be constrained to indent the surface. Such rolling-indenting interactions result in the formation of isolated chips and surface cracks. The cracks and discontinuity on the surface also cause high stress concentration. As a result, the material is cut and removed. The stress fields of a single circular cone of the abrasive particle indenting on silicon crystal with normal and tangential forces can be calculated and analyzed from the modeling equations and boundary conditions. The stresses are expressed with dimensionless stress measures, as functions of normalized geometric parameters. The results show that the maximum normal stress occurs at the indentation point, while the maximum shear stress (σzx ) occurs below the surface of contact, as expected. Such subsurface shear facilitates the peeling effects of the silicon cracks. Both the normal and tangential forces applied at the contacts are incorporated in the model. The model is very effective in explaining and predicting the behaviors and distributions of stresses during the cutting process, and can be used to determine the optimal geometry of the abrasive particles in the rolling-indenting process.
    keyword(s): Stress , Surface acoustic waves , Wire , Semiconductor wafers , Modeling , Particulate matter , Force , Cutting , Silicon , Slurries , Abrasives , Fracture (Materials) , Shear (Mechanics) , Stress concentration , Crystals , Manufacturing , Silicon crystals , Equations , Functions , Geometry , Boundary-value problems , Surface cracks AND Surface quality ,
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      Modeling Stresses of Contacts in Wire Saw Slicing of Polycrystalline and Crystalline Ingots: Application to Silicon Wafer Production

    URI
    http://yetl.yabesh.ir/yetl1/handle/yetl/120260
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    • Journal of Electronic Packaging

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    contributor authorJ. Li
    contributor authorI. Kao
    contributor authorV. Prasad
    date accessioned2017-05-08T23:56:16Z
    date available2017-05-08T23:56:16Z
    date copyrightJune, 1998
    date issued1998
    identifier issn1528-9044
    identifier otherJEPAE4-26166#123_1.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/120260
    description abstractWire saw slicing is a cost effective technology with high surface quality for slicing large diameter silicon wafers. Though wire saws have been deployed to cut polycrystalline and single crystal silicon ingot since the early 1990s, very little is known about the fundamental cutting process. We investigate this manufacturing process and propose a contact stress model of wire saw slicing that illustrates the interactions among the wire, ingot, and abrasives (e.g., SiC) carried by the slurry. Stresses created by wire saw slicing silicon wafers are analyzed in this paper. During the cutting process, the wire moves at high speed (5–15 m/s) with respect to the silicon ingot. The abrasives in the slurry are lose third-body particles caught between the wire and ingot at the contact surface. The forces applied by the wire carry the abrasive particles and cause them to roll on the surface and at the same time to be constrained to indent the surface. Such rolling-indenting interactions result in the formation of isolated chips and surface cracks. The cracks and discontinuity on the surface also cause high stress concentration. As a result, the material is cut and removed. The stress fields of a single circular cone of the abrasive particle indenting on silicon crystal with normal and tangential forces can be calculated and analyzed from the modeling equations and boundary conditions. The stresses are expressed with dimensionless stress measures, as functions of normalized geometric parameters. The results show that the maximum normal stress occurs at the indentation point, while the maximum shear stress (σzx ) occurs below the surface of contact, as expected. Such subsurface shear facilitates the peeling effects of the silicon cracks. Both the normal and tangential forces applied at the contacts are incorporated in the model. The model is very effective in explaining and predicting the behaviors and distributions of stresses during the cutting process, and can be used to determine the optimal geometry of the abrasive particles in the rolling-indenting process.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleModeling Stresses of Contacts in Wire Saw Slicing of Polycrystalline and Crystalline Ingots: Application to Silicon Wafer Production
    typeJournal Paper
    journal volume120
    journal issue2
    journal titleJournal of Electronic Packaging
    identifier doi10.1115/1.2792595
    journal fristpage123
    journal lastpage128
    identifier eissn1043-7398
    keywordsStress
    keywordsSurface acoustic waves
    keywordsWire
    keywordsSemiconductor wafers
    keywordsModeling
    keywordsParticulate matter
    keywordsForce
    keywordsCutting
    keywordsSilicon
    keywordsSlurries
    keywordsAbrasives
    keywordsFracture (Materials)
    keywordsShear (Mechanics)
    keywordsStress concentration
    keywordsCrystals
    keywordsManufacturing
    keywordsSilicon crystals
    keywordsEquations
    keywordsFunctions
    keywordsGeometry
    keywordsBoundary-value problems
    keywordsSurface cracks AND Surface quality
    treeJournal of Electronic Packaging:;1998:;volume( 120 ):;issue: 002
    contenttypeFulltext
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    DSpace software copyright © 2002-2015  DuraSpace
    نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
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