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    Experimental Study on Electric-Current Induced Damage Evolution at the Crack Tip in Thin Film Conductors

    Source: Journal of Electronic Packaging:;1998:;volume( 120 ):;issue: 004::page 354
    Author:
    A.-F. Bastawros
    ,
    K.-S. Kim
    DOI: 10.1115/1.2792646
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: The time dependent temperature distribution induced by electric current heating in a double edge cracked, unpassivated thin aluminum or gold film interconnect lines is monitored using a high resolution infrared imaging system. A pure aluminum or gold film, with a thickness of 0.2 μm, is deposited by high vacuum evaporation coating and patterned into test structures of varying widths. The operative mechanisms of mass transport are assessed in view of the monitored temperature profile. The pre-cracked aluminum film shows fine crack growth towards the positive electrode, which originates from the initial crack tips. The crack-tip temperature is close to melting, during propagation. After the initial crack propagation, a hot spot is formed between the two elongated cracks, and leads to failure. The crack growth generates a backward mass flow towards the negative electrode. The gold film shows a different pattern, in which the original cracks propagate towards each other with a slight tilt towards the negative electrode. The tip temperature is lower than the melting temperature. These time dependent failure mechanisms are rationalize using a proposed critical current intensity factor and a normalized current intensity rate, similar to the fracture toughness KIC for brittle fracture.
    keyword(s): Electric current , Thin films , Fracture (Materials) , Electrodes , Aluminum , Temperature , Melting , Resolution (Optics) , Flow (Dynamics) , Coating processes , Coatings , Vacuum , Evaporation , Failure mechanisms , Brittle fracture , Crack propagation , Failure , Fracture toughness , Infrared imaging , Temperature distribution , Temperature profiles , Thickness , Heating AND Mechanisms ,
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      Experimental Study on Electric-Current Induced Damage Evolution at the Crack Tip in Thin Film Conductors

    URI
    http://yetl.yabesh.ir/yetl1/handle/yetl/120232
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    • Journal of Electronic Packaging

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    contributor authorA.-F. Bastawros
    contributor authorK.-S. Kim
    date accessioned2017-05-08T23:56:13Z
    date available2017-05-08T23:56:13Z
    date copyrightDecember, 1998
    date issued1998
    identifier issn1528-9044
    identifier otherJEPAE4-26169#354_1.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/120232
    description abstractThe time dependent temperature distribution induced by electric current heating in a double edge cracked, unpassivated thin aluminum or gold film interconnect lines is monitored using a high resolution infrared imaging system. A pure aluminum or gold film, with a thickness of 0.2 μm, is deposited by high vacuum evaporation coating and patterned into test structures of varying widths. The operative mechanisms of mass transport are assessed in view of the monitored temperature profile. The pre-cracked aluminum film shows fine crack growth towards the positive electrode, which originates from the initial crack tips. The crack-tip temperature is close to melting, during propagation. After the initial crack propagation, a hot spot is formed between the two elongated cracks, and leads to failure. The crack growth generates a backward mass flow towards the negative electrode. The gold film shows a different pattern, in which the original cracks propagate towards each other with a slight tilt towards the negative electrode. The tip temperature is lower than the melting temperature. These time dependent failure mechanisms are rationalize using a proposed critical current intensity factor and a normalized current intensity rate, similar to the fracture toughness KIC for brittle fracture.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleExperimental Study on Electric-Current Induced Damage Evolution at the Crack Tip in Thin Film Conductors
    typeJournal Paper
    journal volume120
    journal issue4
    journal titleJournal of Electronic Packaging
    identifier doi10.1115/1.2792646
    journal fristpage354
    journal lastpage359
    identifier eissn1043-7398
    keywordsElectric current
    keywordsThin films
    keywordsFracture (Materials)
    keywordsElectrodes
    keywordsAluminum
    keywordsTemperature
    keywordsMelting
    keywordsResolution (Optics)
    keywordsFlow (Dynamics)
    keywordsCoating processes
    keywordsCoatings
    keywordsVacuum
    keywordsEvaporation
    keywordsFailure mechanisms
    keywordsBrittle fracture
    keywordsCrack propagation
    keywordsFailure
    keywordsFracture toughness
    keywordsInfrared imaging
    keywordsTemperature distribution
    keywordsTemperature profiles
    keywordsThickness
    keywordsHeating AND Mechanisms
    treeJournal of Electronic Packaging:;1998:;volume( 120 ):;issue: 004
    contenttypeFulltext
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    DSpace software copyright © 2002-2015  DuraSpace
    نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
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