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    Thermal Stress Measurement in Silicon Chips Encapsulated in IC Plastic Packages Under Temperature Cycling

    Source: Journal of Electronic Packaging:;1993:;volume( 115 ):;issue: 001::page 9
    Author:
    Hideo Miura
    ,
    Makoto Kitano
    ,
    Asao Nishimura
    ,
    Sueo Kawai
    DOI: 10.1115/1.2909307
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: Thermal stress in silicon chips encapsulated in IC plastic packages is discussed. A stress-sensing chip which can detect the three-dimensional stress components separately is developed. Thermal stress occurs in the silicon chip almost linearly with temperature at the steady state. The stress path with temperature during heating is the same as that during cooling. On the other hand, during temperature cycling, stress hysteresis is observed, and the stress increases gradually with increasing cycles. The stress increase phenomenon occurs due to the viscoelastic phenomenon of the molding compounds. The stress-increase ratio is determined by the relationship between the cycle period and the stress relaxation time of the molding compounds at temperatures of interest.
    keyword(s): Temperature , Silicon chips , Thermal stresses , Stress , Cycles , Molding , Cooling , Relaxation (Physics) , Steady state AND Heating ,
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      Thermal Stress Measurement in Silicon Chips Encapsulated in IC Plastic Packages Under Temperature Cycling

    URI
    http://yetl.yabesh.ir/yetl1/handle/yetl/111784
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    contributor authorHideo Miura
    contributor authorMakoto Kitano
    contributor authorAsao Nishimura
    contributor authorSueo Kawai
    date accessioned2017-05-08T23:41:03Z
    date available2017-05-08T23:41:03Z
    date copyrightMarch, 1993
    date issued1993
    identifier issn1528-9044
    identifier otherJEPAE4-26135#9_1.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/111784
    description abstractThermal stress in silicon chips encapsulated in IC plastic packages is discussed. A stress-sensing chip which can detect the three-dimensional stress components separately is developed. Thermal stress occurs in the silicon chip almost linearly with temperature at the steady state. The stress path with temperature during heating is the same as that during cooling. On the other hand, during temperature cycling, stress hysteresis is observed, and the stress increases gradually with increasing cycles. The stress increase phenomenon occurs due to the viscoelastic phenomenon of the molding compounds. The stress-increase ratio is determined by the relationship between the cycle period and the stress relaxation time of the molding compounds at temperatures of interest.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleThermal Stress Measurement in Silicon Chips Encapsulated in IC Plastic Packages Under Temperature Cycling
    typeJournal Paper
    journal volume115
    journal issue1
    journal titleJournal of Electronic Packaging
    identifier doi10.1115/1.2909307
    journal fristpage9
    journal lastpage15
    identifier eissn1043-7398
    keywordsTemperature
    keywordsSilicon chips
    keywordsThermal stresses
    keywordsStress
    keywordsCycles
    keywordsMolding
    keywordsCooling
    keywordsRelaxation (Physics)
    keywordsSteady state AND Heating
    treeJournal of Electronic Packaging:;1993:;volume( 115 ):;issue: 001
    contenttypeFulltext
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    DSpace software copyright © 2002-2015  DuraSpace
    نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
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