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    An Improved Design of the Substrate of Stretchable Gallium Arsenide Photovoltaics

    Source: Journal of Applied Mechanics:;2019:;volume( 086 ):;issue: 003::page 31009
    Author:
    Zhao, Jinsheng
    ,
    Zhang, Yizhe
    ,
    Li, Xiangyu
    ,
    Shi, Mingxing
    DOI: 10.1115/1.4042320
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: A new design has been proposed and numerically analyzed for the polydimethylsiloxane (PDMS) substrate of gallium arsenide (GaAs) photovoltaics. A stack structure is realized by inserting a cube between island and basement, and thus, a support structure of basement-cube-island is formed. Numerical analyses show that, as the deformation of GaAs layer and interfacial stresses are concerned, the height of the stack structure of only island and cube has direct effect on deformation isolation. Especially, the length of the inserted cube can dramatically increase this effect. Therefore, when a cube is inserted between island and basement, a thin photovoltaic film can be realized with reliable performance. As stretch is applied to the film, the thickness of encapsulation is still the dominant factor on deformation of GaAs layer and interfacial stresses, and the length of cube only has slight effect on the influence.
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      An Improved Design of the Substrate of Stretchable Gallium Arsenide Photovoltaics

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    http://yetl.yabesh.ir/yetl1/handle/yetl/4256780
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    contributor authorZhao, Jinsheng
    contributor authorZhang, Yizhe
    contributor authorLi, Xiangyu
    contributor authorShi, Mingxing
    date accessioned2019-03-17T11:10:38Z
    date available2019-03-17T11:10:38Z
    date copyright1/8/2019 12:00:00 AM
    date issued2019
    identifier issn0021-8936
    identifier otherjam_086_03_031009.pdf
    identifier urihttp://yetl.yabesh.ir/yetl1/handle/yetl/4256780
    description abstractA new design has been proposed and numerically analyzed for the polydimethylsiloxane (PDMS) substrate of gallium arsenide (GaAs) photovoltaics. A stack structure is realized by inserting a cube between island and basement, and thus, a support structure of basement-cube-island is formed. Numerical analyses show that, as the deformation of GaAs layer and interfacial stresses are concerned, the height of the stack structure of only island and cube has direct effect on deformation isolation. Especially, the length of the inserted cube can dramatically increase this effect. Therefore, when a cube is inserted between island and basement, a thin photovoltaic film can be realized with reliable performance. As stretch is applied to the film, the thickness of encapsulation is still the dominant factor on deformation of GaAs layer and interfacial stresses, and the length of cube only has slight effect on the influence.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleAn Improved Design of the Substrate of Stretchable Gallium Arsenide Photovoltaics
    typeJournal Paper
    journal volume86
    journal issue3
    journal titleJournal of Applied Mechanics
    identifier doi10.1115/1.4042320
    journal fristpage31009
    journal lastpage031009-11
    treeJournal of Applied Mechanics:;2019:;volume( 086 ):;issue: 003
    contenttypeFulltext
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