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contributor authorDede, Ercan M.
contributor authorLiu, Yanghe
contributor authorJoshi, Shailesh N.
contributor authorZhou, Feng
contributor authorLohan, Danny J.
contributor authorShin, Jong-Won
date accessioned2019-03-17T11:01:15Z
date available2019-03-17T11:01:15Z
date copyright12/5/2018 12:00:00 AM
date issued2019
identifier issn1948-5085
identifier othertsea_011_02_021011.pdf
identifier urihttp://yetl.yabesh.ir/yetl1/handle/yetl/4256536
description abstractDesign optimization of a three-dimensional (3D) heat flow structure for power electronics gate drive circuit thermal management is described. Optimization methods are described in the creation of several structural concepts targeted toward simultaneous temperature reduction of multiple gate drive integrated circuit (IC) devices. Each heat flow path concept is intended for seamless integration based on power electronics packaging space constraints, while maintaining required electrical isolation. The design synthesis and fabrication of a select concept prototype is presented along with the development of an experimental test bench for thermal performance characterization. Experimental results indicate a significant 45 ∘C maximum temperature reduction for the gate drive IC devices in a laboratory environment, which translates to an estimated 41 °C maximum temperature reduction under high temperature (∼100 °C) ambient conditions. The technical approach and design strategy are applicable to future wide band-gap (WBG) electronics packaging applications, where enhanced 3D thermal routing is expected to be critical to maximizing volumetric power density.
publisherThe American Society of Mechanical Engineers (ASME)
titleOptimal Design of Three-Dimensional Heat Flow Structures for Power Electronics Applications
typeJournal Paper
journal volume11
journal issue2
journal titleJournal of Thermal Science and Engineering Applications
identifier doi10.1115/1.4041440
journal fristpage21011
journal lastpage021011-12
treeJournal of Thermal Science and Engineering Applications:;2019:;volume( 011 ):;issue: 002
contenttypeFulltext


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