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contributor authorRoy, Chandan K.
contributor authorBhavnani, Sushil
contributor authorHamilton, Michael C.
contributor authorWayne Johnson, R.
contributor authorKnight, Roy W.
contributor authorHarris, Daniel K.
date accessioned2017-05-09T01:27:25Z
date available2017-05-09T01:27:25Z
date issued2016
identifier issn1528-9044
identifier otherep_138_01_010913.pdf
identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/160794
description abstractThis study investigates the reliability of low melt alloys (LMAs) containing gallium (Ga), indium (In), bismuth (Bi), and tin (Sn) for the application as Thermal interface materials (TIMs). The analysis described herein involved the in situ thermal performance of the LMAs as well as performance evaluation after accelerated life cycle testing, which included high temperature aging at 130 آ°C and thermal cycling from −40 آ°C to 80 آ°C. Three alloys (75.5Ga & 24.5In, 100Ga, and 51In, 32.5Bi & 16.5Sn) were chosen for testing the thermal performance. Testing methodologies used follow ASTM D5470 protocols and the performance of LMAs is compared with some highperforming commercially available TIMs. Results show that LMAs can offer extremely low (<0.01 cm2 آ°C/W) thermal resistance compared to any commercial TIMs. The LMA–substrate interactions were explored using different surface treatments (copper and tungsten). Measurements show that depending on the substrate–alloy combinations, the proposed alloys survive 1500 hrs of aging at 130 آ°C and 1000 cycles from −40 آ°C to 80 آ°C without significant performance degradation. The obtained results indicate the LMAs are very efficient as TIMs.
publisherThe American Society of Mechanical Engineers (ASME)
titleDurability of Low Melt Alloys as Thermal Interface Materials
typeJournal Paper
journal volume138
journal issue1
journal titleJournal of Electronic Packaging
identifier doi10.1115/1.4032462
journal fristpage10913
journal lastpage10913
identifier eissn1043-7398
treeJournal of Electronic Packaging:;2016:;volume( 138 ):;issue: 001
contenttypeFulltext


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