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    Plasma Texturing Processes and a Si:H Surface Passivation on c Si Wafers for Photovoltaic Applications

    Source: Journal of Solar Energy Engineering:;2015:;volume( 137 ):;issue: 005::page 51010
    Author:
    Murias, D.
    ,
    Moreno, M.
    ,
    Reyes
    ,
    Torres, A.
    ,
    Ambrosio, R.
    ,
    Rosales, P.
    ,
    Martأ­nez, J.
    ,
    Vivaldo, I.
    ,
    Roca i Cabarrocas, P.
    DOI: 10.1115/1.4031105
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: In this work, we report the formation of pyramidlike structures on crystalline silicon (cSi) substrates using plasmatexturing processes, and also, we present optimized process conditions for the deposition of hydrogenated amorphous silicon in order to passivate low cost CZ cSi wafers. A relatively high effective lifetime of minority carriers was measured on nontextured wafers. Our results demonstrate that plasmatexturing processes can produce similar results or even better than wettexturing processes. Finally, combined plasma texturing and passivation at low temperature is a promising approach for the fabrication of low cost heterojunction solar cells in CZ cSi substrates.
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      Plasma Texturing Processes and a Si:H Surface Passivation on c Si Wafers for Photovoltaic Applications

    URI
    http://yetl.yabesh.ir/yetl1/handle/yetl/159654
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    • Journal of Solar Energy Engineering

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    contributor authorMurias, D.
    contributor authorMoreno, M.
    contributor authorReyes
    contributor authorTorres, A.
    contributor authorAmbrosio, R.
    contributor authorRosales, P.
    contributor authorMartأ­nez, J.
    contributor authorVivaldo, I.
    contributor authorRoca i Cabarrocas, P.
    date accessioned2017-05-09T01:23:35Z
    date available2017-05-09T01:23:35Z
    date issued2015
    identifier issn0199-6231
    identifier othersol_137_05_051010.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/159654
    description abstractIn this work, we report the formation of pyramidlike structures on crystalline silicon (cSi) substrates using plasmatexturing processes, and also, we present optimized process conditions for the deposition of hydrogenated amorphous silicon in order to passivate low cost CZ cSi wafers. A relatively high effective lifetime of minority carriers was measured on nontextured wafers. Our results demonstrate that plasmatexturing processes can produce similar results or even better than wettexturing processes. Finally, combined plasma texturing and passivation at low temperature is a promising approach for the fabrication of low cost heterojunction solar cells in CZ cSi substrates.
    publisherThe American Society of Mechanical Engineers (ASME)
    titlePlasma Texturing Processes and a Si:H Surface Passivation on c Si Wafers for Photovoltaic Applications
    typeJournal Paper
    journal volume137
    journal issue5
    journal titleJournal of Solar Energy Engineering
    identifier doi10.1115/1.4031105
    journal fristpage51010
    journal lastpage51010
    identifier eissn1528-8986
    treeJournal of Solar Energy Engineering:;2015:;volume( 137 ):;issue: 005
    contenttypeFulltext
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    DSpace software copyright © 2002-2015  DuraSpace
    نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
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