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    Computational Study of Contact Solidification for Silicon Film Growth in the Ribbon Growth on Substrate System

    Source: Journal of Thermal Science and Engineering Applications:;2014:;volume( 006 ):;issue: 001::page 11011
    Author:
    Askarian, Samin
    ,
    Ma, Ronghui
    DOI: 10.1115/1.4025050
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: Ribbon growth on substrate (RGS) has emerged as a new method for growing silicon films at low cost for photovoltaic applications by contact solidification. Thermal conditions play an important role in determining the thickness and quality of the asgrown films. In this study, we have developed a mathematical model for heat transfer, fluid flow, and solidification in the RGS process. In particular, a semianalytical approach is used in this model to predict solidification with a sharp solid–liquid interface without using a moving grid system. A more realistic analytical relationship that considers the varying rate of heat removal at the interface has been developed to evaluate the effective heat transfer rate, solidification rate, and solidification front. These models were used to predict the flow patterns in the crucible, the temperature distributions in the system, the velocity fields in the crucible, the solidification rates, and the film thicknesses. The effects of important operational parameters, such as pulling speed, preheat temperature, and thermal properties of the substrate material, have been examined. In addition, an order of magnitude analysis has been performed to understand heat transfer in the growing film and substrate. This analysis leads to a simplified mathematical model for heat transfer and solidification, which can be resolved analytically to derive theoretical solutions for the effective heat transfer coefficient, the rate of solidification, and the film thickness. The results show that the solidification rate varies largely on the substrate. The nonuniformity can be mitigated by altering the temperature distribution in the silicon melt through manipulating heat generation in the top heater. The rates of solidification and film thickness are very sensitive to both the thermal conductivity and preheat temperature of the substrate. Increasing pulling velocity will increase the rate of solidification at the leading edge but reduce the film thickness. The numerical model and the theoretical solution provide an important tool for thermal design and optimization of the RGS system.
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      Computational Study of Contact Solidification for Silicon Film Growth in the Ribbon Growth on Substrate System

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    http://yetl.yabesh.ir/yetl1/handle/yetl/156342
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    • Journal of Thermal Science and Engineering Applications

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    contributor authorAskarian, Samin
    contributor authorMa, Ronghui
    date accessioned2017-05-09T01:12:37Z
    date available2017-05-09T01:12:37Z
    date issued2014
    identifier issn1948-5085
    identifier othertsea_006_01_011011.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/156342
    description abstractRibbon growth on substrate (RGS) has emerged as a new method for growing silicon films at low cost for photovoltaic applications by contact solidification. Thermal conditions play an important role in determining the thickness and quality of the asgrown films. In this study, we have developed a mathematical model for heat transfer, fluid flow, and solidification in the RGS process. In particular, a semianalytical approach is used in this model to predict solidification with a sharp solid–liquid interface without using a moving grid system. A more realistic analytical relationship that considers the varying rate of heat removal at the interface has been developed to evaluate the effective heat transfer rate, solidification rate, and solidification front. These models were used to predict the flow patterns in the crucible, the temperature distributions in the system, the velocity fields in the crucible, the solidification rates, and the film thicknesses. The effects of important operational parameters, such as pulling speed, preheat temperature, and thermal properties of the substrate material, have been examined. In addition, an order of magnitude analysis has been performed to understand heat transfer in the growing film and substrate. This analysis leads to a simplified mathematical model for heat transfer and solidification, which can be resolved analytically to derive theoretical solutions for the effective heat transfer coefficient, the rate of solidification, and the film thickness. The results show that the solidification rate varies largely on the substrate. The nonuniformity can be mitigated by altering the temperature distribution in the silicon melt through manipulating heat generation in the top heater. The rates of solidification and film thickness are very sensitive to both the thermal conductivity and preheat temperature of the substrate. Increasing pulling velocity will increase the rate of solidification at the leading edge but reduce the film thickness. The numerical model and the theoretical solution provide an important tool for thermal design and optimization of the RGS system.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleComputational Study of Contact Solidification for Silicon Film Growth in the Ribbon Growth on Substrate System
    typeJournal Paper
    journal volume6
    journal issue1
    journal titleJournal of Thermal Science and Engineering Applications
    identifier doi10.1115/1.4025050
    journal fristpage11011
    journal lastpage11011
    identifier eissn1948-5093
    treeJournal of Thermal Science and Engineering Applications:;2014:;volume( 006 ):;issue: 001
    contenttypeFulltext
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