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contributor authorYan, Yi
contributor authorGuan, Youliang
contributor authorChen, Xu
contributor authorLu, Guo
date accessioned2017-05-09T00:57:45Z
date available2017-05-09T00:57:45Z
date issued2013
identifier issn1528-9044
identifier otherep_135_04_041003.pdf
identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/151442
description abstractThe thermal and the optoelectronic performance of high power gallium arsenide (GaAs) laser diode dieattached with sintered silver joint were investigated. The thermal and mechanical characteristics of the Laser bar packaging were simulated by finite element analysis (FEA). On the basis of prior experimental observations, voids in the bonding layer were intentionally introduced in the FEA model to examine their effect on the laser diode operating in the continuouswave (CW) mode under different drive currents. The simulation results indicate that the quality of the bonding layer is very important to the heat dissipation capability of the packaging. Any void in the dieattach material would become a hotspot and thus deteriorate the optoelectronic performance of the laser diode. In addition, because of the coefficient of thermal expansion (CTE) mismatch between the laser bar and the copper heat sink, the interfacial thermomechanical stress will cause a noticeable curvature of the laser diode and a blueshift in the wavelength.
publisherThe American Society of Mechanical Engineers (ASME)
titleEffects of Voids in Sintered Silver Joint on Thermal and Optoelectronic Performances of High Power Laser Diode
typeJournal Paper
journal volume135
journal issue4
journal titleJournal of Electronic Packaging
identifier doi10.1115/1.4025247
journal fristpage41003
journal lastpage41003
identifier eissn1043-7398
treeJournal of Electronic Packaging:;2013:;volume( 135 ):;issue: 004
contenttypeFulltext


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