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    Modeling-Simulation and Analysis of MEMS Capacitive Millibar Pressure Sensor

    Source: Journal of Nanotechnology in Engineering and Medicine:;2010:;volume( 001 ):;issue: 004::page 41003
    Author:
    P. A. Manoharan
    ,
    D. Nedumaran
    DOI: 10.1115/1.4002320
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: Design and simulation of MEMS based capacitive sensor with doubly supported serpentine meander structure for millibar pressure applications proposed in this work is analyzed using INTELLISUITE ™ and NISA ™ softwares. In this model, microsensing membrane (MSM) is simulated using gold, silicon, and platinum materials of 1 μm and 2 μm thickness. This model has the incorporation to study the sensitivity and spring constant of the support structures for different boundary conditions. The model is validated in terms of virtual force method and finite element method. The design performance of the model is analyzed for the MSM’s support structure stability, maximum permissible displacement limit, sensitivity, pull-in, hysteresis, and dynamic behavior for different pressure loads. Design consideration is taken care to avoid deformation of MSM for the application of pressure load. The spring constant and the effect of fringing field capacitance is evaluated to optimize the design. The key factors of design information for the fabrication of millibar pressure sensor are analyzed.
    keyword(s): Electric potential , Sensors , Capacitance , Simulation , Stress , Pressure sensors , Microelectromechanical systems , Design , Modeling , Boundary-value problems , Displacement , Elastic constants , Membranes , Force , Pressure , Thickness , Stability , Manufacturing , Silicon AND Finite element methods ,
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      Modeling-Simulation and Analysis of MEMS Capacitive Millibar Pressure Sensor

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    contributor authorP. A. Manoharan
    contributor authorD. Nedumaran
    date accessioned2017-05-09T00:40:11Z
    date available2017-05-09T00:40:11Z
    date copyrightNovember, 2010
    date issued2010
    identifier issn1949-2944
    identifier otherJNEMAA-28046#041003_1.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/144507
    description abstractDesign and simulation of MEMS based capacitive sensor with doubly supported serpentine meander structure for millibar pressure applications proposed in this work is analyzed using INTELLISUITE ™ and NISA ™ softwares. In this model, microsensing membrane (MSM) is simulated using gold, silicon, and platinum materials of 1 μm and 2 μm thickness. This model has the incorporation to study the sensitivity and spring constant of the support structures for different boundary conditions. The model is validated in terms of virtual force method and finite element method. The design performance of the model is analyzed for the MSM’s support structure stability, maximum permissible displacement limit, sensitivity, pull-in, hysteresis, and dynamic behavior for different pressure loads. Design consideration is taken care to avoid deformation of MSM for the application of pressure load. The spring constant and the effect of fringing field capacitance is evaluated to optimize the design. The key factors of design information for the fabrication of millibar pressure sensor are analyzed.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleModeling-Simulation and Analysis of MEMS Capacitive Millibar Pressure Sensor
    typeJournal Paper
    journal volume1
    journal issue4
    journal titleJournal of Nanotechnology in Engineering and Medicine
    identifier doi10.1115/1.4002320
    journal fristpage41003
    identifier eissn1949-2952
    keywordsElectric potential
    keywordsSensors
    keywordsCapacitance
    keywordsSimulation
    keywordsStress
    keywordsPressure sensors
    keywordsMicroelectromechanical systems
    keywordsDesign
    keywordsModeling
    keywordsBoundary-value problems
    keywordsDisplacement
    keywordsElastic constants
    keywordsMembranes
    keywordsForce
    keywordsPressure
    keywordsThickness
    keywordsStability
    keywordsManufacturing
    keywordsSilicon AND Finite element methods
    treeJournal of Nanotechnology in Engineering and Medicine:;2010:;volume( 001 ):;issue: 004
    contenttypeFulltext
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