YaBeSH Engineering and Technology Library

    • Journals
    • PaperQuest
    • YSE Standards
    • YaBeSH
    • Login
    View Item 
    •   YE&T Library
    • ASME
    • Journal of Manufacturing Science and Engineering
    • View Item
    •   YE&T Library
    • ASME
    • Journal of Manufacturing Science and Engineering
    • View Item
    • All Fields
    • Source Title
    • Year
    • Publisher
    • Title
    • Subject
    • Author
    • DOI
    • ISBN
    Advanced Search
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Archive

    Integrated Sustainability Analysis of Atomic Layer Deposition for Microelectronics Manufacturing

    Source: Journal of Manufacturing Science and Engineering:;2010:;volume( 132 ):;issue: 003::page 30918
    Author:
    Chris Y. Yuan
    ,
    David A. Dornfeld
    DOI: 10.1115/1.4001686
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: Atomic layer deposition (ALD) is a promising nanotechnology for wide applications in microelectronics manufacturing due to its ability to control layer growth at atomic scale. Sustainability of ALD technology needs to be quantitatively investigated in this early development stage to improve its economic and environmental performance. In this paper, we present an integrated sustainability analysis of ALD technology through material and energy flow analyses. The study is performed on the ALD of Al2O3 high-κ dielectric film through trimethylaluminum and water binary reactions. The precursor utilizations, methane emissions, and nanowaste generations from the ALD process are all quantitatively studied. Energy flow analysis demonstrates that the ALD process energy consumption is mainly determined by the ALD cycle time rather than the process temperature. Scale-up performance of the ALD technology is also studied for both emission generations and energy consumptions. Strategies and methods for improving the sustainability performance of the ALD technology are suggested based on the analysis.
    keyword(s): Flow (Dynamics) , Temperature , Manufacturing , Semiconductor wafers , Sustainability , Cycles , Energy consumption , Water , Microelectronic devices , Emissions , Pipelines , Thin films , Pressure , Gates (Closures) AND Methane ,
    • Download: (517.0Kb)
    • Show Full MetaData Hide Full MetaData
    • Get RIS
    • Item Order
    • Go To Publisher
    • Price: 5000 Rial
    • Statistics

      Integrated Sustainability Analysis of Atomic Layer Deposition for Microelectronics Manufacturing

    URI
    http://yetl.yabesh.ir/yetl1/handle/yetl/144060
    Collections
    • Journal of Manufacturing Science and Engineering

    Show full item record

    contributor authorChris Y. Yuan
    contributor authorDavid A. Dornfeld
    date accessioned2017-05-09T00:39:21Z
    date available2017-05-09T00:39:21Z
    date copyrightJune, 2010
    date issued2010
    identifier issn1087-1357
    identifier otherJMSEFK-28371#030918_1.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/144060
    description abstractAtomic layer deposition (ALD) is a promising nanotechnology for wide applications in microelectronics manufacturing due to its ability to control layer growth at atomic scale. Sustainability of ALD technology needs to be quantitatively investigated in this early development stage to improve its economic and environmental performance. In this paper, we present an integrated sustainability analysis of ALD technology through material and energy flow analyses. The study is performed on the ALD of Al2O3 high-κ dielectric film through trimethylaluminum and water binary reactions. The precursor utilizations, methane emissions, and nanowaste generations from the ALD process are all quantitatively studied. Energy flow analysis demonstrates that the ALD process energy consumption is mainly determined by the ALD cycle time rather than the process temperature. Scale-up performance of the ALD technology is also studied for both emission generations and energy consumptions. Strategies and methods for improving the sustainability performance of the ALD technology are suggested based on the analysis.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleIntegrated Sustainability Analysis of Atomic Layer Deposition for Microelectronics Manufacturing
    typeJournal Paper
    journal volume132
    journal issue3
    journal titleJournal of Manufacturing Science and Engineering
    identifier doi10.1115/1.4001686
    journal fristpage30918
    identifier eissn1528-8935
    keywordsFlow (Dynamics)
    keywordsTemperature
    keywordsManufacturing
    keywordsSemiconductor wafers
    keywordsSustainability
    keywordsCycles
    keywordsEnergy consumption
    keywordsWater
    keywordsMicroelectronic devices
    keywordsEmissions
    keywordsPipelines
    keywordsThin films
    keywordsPressure
    keywordsGates (Closures) AND Methane
    treeJournal of Manufacturing Science and Engineering:;2010:;volume( 132 ):;issue: 003
    contenttypeFulltext
    DSpace software copyright © 2002-2015  DuraSpace
    نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
    yabeshDSpacePersian
     
    DSpace software copyright © 2002-2015  DuraSpace
    نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
    yabeshDSpacePersian