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contributor authorChris Y. Yuan
contributor authorDavid A. Dornfeld
date accessioned2017-05-09T00:39:21Z
date available2017-05-09T00:39:21Z
date copyrightJune, 2010
date issued2010
identifier issn1087-1357
identifier otherJMSEFK-28371#030918_1.pdf
identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/144060
description abstractAtomic layer deposition (ALD) is a promising nanotechnology for wide applications in microelectronics manufacturing due to its ability to control layer growth at atomic scale. Sustainability of ALD technology needs to be quantitatively investigated in this early development stage to improve its economic and environmental performance. In this paper, we present an integrated sustainability analysis of ALD technology through material and energy flow analyses. The study is performed on the ALD of Al2O3 high-κ dielectric film through trimethylaluminum and water binary reactions. The precursor utilizations, methane emissions, and nanowaste generations from the ALD process are all quantitatively studied. Energy flow analysis demonstrates that the ALD process energy consumption is mainly determined by the ALD cycle time rather than the process temperature. Scale-up performance of the ALD technology is also studied for both emission generations and energy consumptions. Strategies and methods for improving the sustainability performance of the ALD technology are suggested based on the analysis.
publisherThe American Society of Mechanical Engineers (ASME)
titleIntegrated Sustainability Analysis of Atomic Layer Deposition for Microelectronics Manufacturing
typeJournal Paper
journal volume132
journal issue3
journal titleJournal of Manufacturing Science and Engineering
identifier doi10.1115/1.4001686
journal fristpage30918
identifier eissn1528-8935
keywordsFlow (Dynamics)
keywordsTemperature
keywordsManufacturing
keywordsSemiconductor wafers
keywordsSustainability
keywordsCycles
keywordsEnergy consumption
keywordsWater
keywordsMicroelectronic devices
keywordsEmissions
keywordsPipelines
keywordsThin films
keywordsPressure
keywordsGates (Closures) AND Methane
treeJournal of Manufacturing Science and Engineering:;2010:;volume( 132 ):;issue: 003
contenttypeFulltext


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