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    Parametric Modeling and Optimization of Chemical Vapor Deposition Process

    Source: Journal of Manufacturing Science and Engineering:;2009:;volume( 131 ):;issue: 001::page 11011
    Author:
    Po Ting Lin
    ,
    Yogesh Jaluria
    ,
    Hae Chang Gea
    DOI: 10.1115/1.3063689
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: This paper focuses on the parametric modeling and optimization of the chemical vapor deposition (CVD) process for the deposition of thin films of silicon from silane in a vertical impinging CVD reactor. The parametric modeling using radial basis function for various functions, which is related to the deposition rate and uniformity of the thin films, is studied. These models are compared and validated with additional sampling data. Based on the parametric models, different optimization formulations for maximizing the deposition rate and the working areas of thin film are performed.
    keyword(s): Chemical vapor deposition , Sampling (Acoustical engineering) , Modeling , Optimization , Functions , Temperature , Silicon , Thin films AND Simulation ,
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      Parametric Modeling and Optimization of Chemical Vapor Deposition Process

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    http://yetl.yabesh.ir/yetl1/handle/yetl/141271
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    contributor authorPo Ting Lin
    contributor authorYogesh Jaluria
    contributor authorHae Chang Gea
    date accessioned2017-05-09T00:34:11Z
    date available2017-05-09T00:34:11Z
    date copyrightFebruary, 2009
    date issued2009
    identifier issn1087-1357
    identifier otherJMSEFK-28073#011011_1.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/141271
    description abstractThis paper focuses on the parametric modeling and optimization of the chemical vapor deposition (CVD) process for the deposition of thin films of silicon from silane in a vertical impinging CVD reactor. The parametric modeling using radial basis function for various functions, which is related to the deposition rate and uniformity of the thin films, is studied. These models are compared and validated with additional sampling data. Based on the parametric models, different optimization formulations for maximizing the deposition rate and the working areas of thin film are performed.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleParametric Modeling and Optimization of Chemical Vapor Deposition Process
    typeJournal Paper
    journal volume131
    journal issue1
    journal titleJournal of Manufacturing Science and Engineering
    identifier doi10.1115/1.3063689
    journal fristpage11011
    identifier eissn1528-8935
    keywordsChemical vapor deposition
    keywordsSampling (Acoustical engineering)
    keywordsModeling
    keywordsOptimization
    keywordsFunctions
    keywordsTemperature
    keywordsSilicon
    keywordsThin films AND Simulation
    treeJournal of Manufacturing Science and Engineering:;2009:;volume( 131 ):;issue: 001
    contenttypeFulltext
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    DSpace software copyright © 2002-2015  DuraSpace
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