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contributor authorPo Ting Lin
contributor authorYogesh Jaluria
contributor authorHae Chang Gea
date accessioned2017-05-09T00:34:11Z
date available2017-05-09T00:34:11Z
date copyrightFebruary, 2009
date issued2009
identifier issn1087-1357
identifier otherJMSEFK-28073#011011_1.pdf
identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/141271
description abstractThis paper focuses on the parametric modeling and optimization of the chemical vapor deposition (CVD) process for the deposition of thin films of silicon from silane in a vertical impinging CVD reactor. The parametric modeling using radial basis function for various functions, which is related to the deposition rate and uniformity of the thin films, is studied. These models are compared and validated with additional sampling data. Based on the parametric models, different optimization formulations for maximizing the deposition rate and the working areas of thin film are performed.
publisherThe American Society of Mechanical Engineers (ASME)
titleParametric Modeling and Optimization of Chemical Vapor Deposition Process
typeJournal Paper
journal volume131
journal issue1
journal titleJournal of Manufacturing Science and Engineering
identifier doi10.1115/1.3063689
journal fristpage11011
identifier eissn1528-8935
keywordsChemical vapor deposition
keywordsSampling (Acoustical engineering)
keywordsModeling
keywordsOptimization
keywordsFunctions
keywordsTemperature
keywordsSilicon
keywordsThin films AND Simulation
treeJournal of Manufacturing Science and Engineering:;2009:;volume( 131 ):;issue: 001
contenttypeFulltext


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