Measurement of Biaxial Stress States in Silicon Using Micro-Raman Spectroscopy

Abstract

Micro-Raman spectroscopy is used to determine the multiaxial stress state in silicon wafers using a strategy proposed by , (J. Appl. Phys.82, 2595–2602 (1997)) Previously, this strategy was validated when silicon was subjected to uniaxial stress in the laboratory frame (, J. Appl. Phys.96, 7195–7201 (2004)). In the present work, silicon wafers have been analyzed that were subjected to biaxial stress states in the laboratory frame. The predicted curves for the initially degenerate F2g peaks were found to fall within the variability of the measured curves. Stress ratios were found to be predictable. Stress magnitudes were also found to be predictable, but are subject to uncertainty greater than 25%. To perform these tests, an apparatus has been developed which can provide controlled ratios of biaxial stress in a simple and compact test geometry. This fixture was used under a microscope, enabling in situ measurement of biaxial stress states.