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contributor authorR. Kukta
contributor authorAssoc. Mem. ASME
contributor authorA. Peralta
contributor authorAssoc. Mem. ASME
contributor authorD. Kouris
date accessioned2017-05-09T00:06:37Z
date available2017-05-09T00:06:37Z
date copyrightJuly, 2002
date issued2002
identifier issn0021-8936
identifier otherJAMCAV-26539#443_1.pdf
identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/126258
description abstractThe elastic interaction between surface steps biases growth and can have a dominant influence on growth modes of thin films. A new continuum solution is presented that takes into account the actual geometry of the steps. It is shown that even in the absence of external stress, the interaction energy contains a logarithmic dependence not previously reported in the literature. This additional term is of the same order of magnitude as the ones contained in the solution of Marchenko and Parshin that has been generally used during the past twenty years. Opposite and similar steps are investigated and closed-form expressions for the relevant elastic fields and interaction energies are derived. Results compare favorably with the ones obtained from embedded atom method (EAM) simulations and a recent elastic lattice model.
publisherThe American Society of Mechanical Engineers (ASME)
titleSurface Steps: From Atomistics to Continuum
typeJournal Paper
journal volume69
journal issue4
journal titleJournal of Applied Mechanics
identifier doi10.1115/1.1468999
journal fristpage443
journal lastpage450
identifier eissn1528-9036
keywordsStress
keywordsEngineering simulation
keywordsGeometry
keywordsThin films AND Atoms
treeJournal of Applied Mechanics:;2002:;volume( 069 ):;issue: 004
contenttypeFulltext


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