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contributor authorK. Verma
contributor authorB. Han
date accessioned2017-05-09T00:02:11Z
date available2017-05-09T00:02:11Z
date copyrightSeptember, 2000
date issued2000
identifier issn1528-9044
identifier otherJEPAE4-26184#227_1.pdf
identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/123540
description abstractFar infrared Fizeau interferometry is developed and it is proposed as a tool for warpage measurement of microelectronics devices. The method provides a whole-field map of surface topography with a basic measurement sensitivity of 5.31 μm per fringe contour. The method is implemented by a compact apparatus using a computer controlled environmental chamber for real-time measurement. The method retains the simplicity of classical interferometry while providing wide applicability to dielectric rough surfaces. Roughness tolerance is achieved by utilizing a far infrared light (λ=10.6 μm). The detailed optical and mechanical configuration is described and selected applications are presented to demonstrate the applicability. The unique advantages of the method are discussed. [S1043-7398(00)01303-7]
publisherThe American Society of Mechanical Engineers (ASME)
titleWarpage Measurement on Dielectric Rough Surfaces of Microelectronics Devices by Far Infrared Fizeau Interferometry1
typeJournal Paper
journal volume122
journal issue3
journal titleJournal of Electronic Packaging
identifier doi10.1115/1.1286315
journal fristpage227
journal lastpage232
identifier eissn1043-7398
keywordsInterferometry
keywordsSurface roughness
keywordsWarping
keywordsMicroelectronic devices
keywordsInfrared radiation AND Manufacturing
treeJournal of Electronic Packaging:;2000:;volume( 122 ):;issue: 003
contenttypeFulltext


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