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contributor authorF. Yang
contributor authorI. Kao
date accessioned2017-05-08T23:59:21Z
date available2017-05-08T23:59:21Z
date copyrightSeptember, 1999
date issued1999
identifier issn1528-9044
identifier otherJEPAE4-26174#191_1.pdf
identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/122000
description abstractIn wiresaw manufacturing processes, such as those in slicing silicon wafers for electronics fabrication, abrasive slurry is carried by high-speed wire (5 to 15 m/s), which exerts normal load to the surface via hydrodynamic effects and bow of taut wire. As a result, the abrasives carried by slurry are constrained to indent onto and roll over the surface of substrate. In this paper, the axisymmetric indentation problem in the free abrasive machining (FAM) is studied by modeling a rigid abrasive of different shapes pushing onto an elastic half space. Based on the harmonic property of dilatation, the closed-form solution of stress distribution inside the cutting material for three different indentation processes in common FAM process are presented: cylindrical and conical abrasives as well as uniform pressure distribution. Along the symmetrical axis, von-Mises stress is two times larger than that of local maximum shear stress for all three indentation conditions. The von-Mises stress is infinity at the contact point for sharp pointed indentation, a location of crack initiation and nucleation. For indentation by abrasive of flat surface, which also can be provided by the localized effects due to the hydrodynamic pressure acting on the surface, both the von-Mises and local maximum shear stress reach maximum underneath the contact zone.
publisherThe American Society of Mechanical Engineers (ASME)
titleInterior Stress for Axisymmetric Abrasive Indentation in the Free Abrasive Machining Process: Slicing Silicon Wafers With Modern Wiresaw
typeJournal Paper
journal volume121
journal issue3
journal titleJournal of Electronic Packaging
identifier doi10.1115/1.2792683
journal fristpage191
journal lastpage195
identifier eissn1043-7398
keywordsSemiconductor wafers
keywordsStress
keywordsAbrasive machining
keywordsSlurries
keywordsShear (Mechanics)
keywordsPressure
keywordsAbrasives
keywordsManufacturing
keywordsWire
keywordsSymmetry (Physics)
keywordsNucleation (Physics)
keywordsStress concentration
keywordsFracture (Materials)
keywordsCutting
keywordsElastic half space
keywordsShapes
keywordsElectronics AND Modeling
treeJournal of Electronic Packaging:;1999:;volume( 121 ):;issue: 003
contenttypeFulltext


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