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    On the Chemo-Mechanical Polishing (CMP) of Si3N4 Bearing Balls With Water Based CeO2 Slurry

    Source: Journal of Engineering Materials and Technology:;1998:;volume( 120 ):;issue: 004::page 304
    Author:
    Ming Jiang
    ,
    Nelson O. Wood
    ,
    R. Komanduri
    DOI: 10.1115/1.2807019
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: Among various abrasives investigated for the chemo-mechanical polishing (CMP) of Si3 N4 balls (Jiang, 1998), cerium oxide (CeO2 ) was found to be the most effective polishing medium (even superior to Cr2 03 , Bhagavatula and Komanduri, 1996), yielding an extremely smooth and damage-free surface with a finish Ra of ≈4 nm and Rt of ≈40 nm. In this investigation, the underlying reasons for the superior finish with CeO2 were investigated. Various chemical reactions involved in CMP of Si3 N4 balls with CeO2 were investigated (Gibbs free energy minimization) and a mechanism for the CMP is proposed. The two important functions that CeO2 performs in the CMP of Si3 N4 are: 1. It participates directly in the chemical reaction (oxidization-reduction reaction) with Si3 N4 workmaterial leading to the formation of a thin SiO2 layer, 2. The hardness of CeO2 is closer to that of the thin SiO2 layer formed on Si3 N4 but significantly lower than Si3 N4 workmaterial (≈1/3). It can thus remove the brittle SiO2 reaction product effectively without damaging the Si3 N4 substrate as no abrasion can take place by CeO2 on Si3 N4 . The kinetic action, which involves the removal of the reaction products from the interface by subsequent mechanical action of flowing water and CeO2 is critical to CMP. The chemical reaction could proceed on a continuing basis so long as the passivation layers are removed by the mechanical action at the same time. CeO2 is found to be very effective in a water environment (hydrolysis) leading to the formation of additional SiO2 by reacting with Si3 N4 thereby enhancing the CMP of Si3 N4 . Several similarities between polishing of Si3 N4 and glass (SiO2 ) (Cook, 1990), including the polishing environment (CeO2 plus the magnetic fluid, pH value ≈6) and the mechanism of polishing were observed. Also, after investigating various reaction species in the CMP of Si3 N4 with CeO2 and Cr2 03 , the former is found to be much safer from an environmental point of view (Reddy and Komanduri, 1998).
    keyword(s): Polishing , Silicon nitride ceramics , Bearings , Slurries , Water , Mechanisms , Finishes , Gibbs' free energy , Abrasion , Abrasives , Glass , Brittleness , Magnetic fluids AND Functions ,
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      On the Chemo-Mechanical Polishing (CMP) of Si3N4 Bearing Balls With Water Based CeO2 Slurry

    URI
    http://yetl.yabesh.ir/yetl1/handle/yetl/120506
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    • Journal of Engineering Materials and Technology

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    contributor authorMing Jiang
    contributor authorNelson O. Wood
    contributor authorR. Komanduri
    date accessioned2017-05-08T23:56:43Z
    date available2017-05-08T23:56:43Z
    date copyrightOctober, 1998
    date issued1998
    identifier issn0094-4289
    identifier otherJEMTA8-26994#304_1.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/120506
    description abstractAmong various abrasives investigated for the chemo-mechanical polishing (CMP) of Si3 N4 balls (Jiang, 1998), cerium oxide (CeO2 ) was found to be the most effective polishing medium (even superior to Cr2 03 , Bhagavatula and Komanduri, 1996), yielding an extremely smooth and damage-free surface with a finish Ra of ≈4 nm and Rt of ≈40 nm. In this investigation, the underlying reasons for the superior finish with CeO2 were investigated. Various chemical reactions involved in CMP of Si3 N4 balls with CeO2 were investigated (Gibbs free energy minimization) and a mechanism for the CMP is proposed. The two important functions that CeO2 performs in the CMP of Si3 N4 are: 1. It participates directly in the chemical reaction (oxidization-reduction reaction) with Si3 N4 workmaterial leading to the formation of a thin SiO2 layer, 2. The hardness of CeO2 is closer to that of the thin SiO2 layer formed on Si3 N4 but significantly lower than Si3 N4 workmaterial (≈1/3). It can thus remove the brittle SiO2 reaction product effectively without damaging the Si3 N4 substrate as no abrasion can take place by CeO2 on Si3 N4 . The kinetic action, which involves the removal of the reaction products from the interface by subsequent mechanical action of flowing water and CeO2 is critical to CMP. The chemical reaction could proceed on a continuing basis so long as the passivation layers are removed by the mechanical action at the same time. CeO2 is found to be very effective in a water environment (hydrolysis) leading to the formation of additional SiO2 by reacting with Si3 N4 thereby enhancing the CMP of Si3 N4 . Several similarities between polishing of Si3 N4 and glass (SiO2 ) (Cook, 1990), including the polishing environment (CeO2 plus the magnetic fluid, pH value ≈6) and the mechanism of polishing were observed. Also, after investigating various reaction species in the CMP of Si3 N4 with CeO2 and Cr2 03 , the former is found to be much safer from an environmental point of view (Reddy and Komanduri, 1998).
    publisherThe American Society of Mechanical Engineers (ASME)
    titleOn the Chemo-Mechanical Polishing (CMP) of Si3N4 Bearing Balls With Water Based CeO2 Slurry
    typeJournal Paper
    journal volume120
    journal issue4
    journal titleJournal of Engineering Materials and Technology
    identifier doi10.1115/1.2807019
    journal fristpage304
    journal lastpage312
    identifier eissn1528-8889
    keywordsPolishing
    keywordsSilicon nitride ceramics
    keywordsBearings
    keywordsSlurries
    keywordsWater
    keywordsMechanisms
    keywordsFinishes
    keywordsGibbs' free energy
    keywordsAbrasion
    keywordsAbrasives
    keywordsGlass
    keywordsBrittleness
    keywordsMagnetic fluids AND Functions
    treeJournal of Engineering Materials and Technology:;1998:;volume( 120 ):;issue: 004
    contenttypeFulltext
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    DSpace software copyright © 2002-2015  DuraSpace
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