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    Buoyant Convection During the Growth of Compound Semiconductors by the Liquid-Encapsulated Czochralski Process With an Axial Magnetic Field and With a Non-Axisymmetric Temperature

    Source: Journal of Fluids Engineering:;1996:;volume( 118 ):;issue: 001::page 155
    Author:
    Nancy Ma
    ,
    J. S. Walker
    DOI: 10.1115/1.2817494
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: This paper treats the buoyant convection of a molten semiconductor in a cylindrical crucible with a vertical axis, with a uniform vertical magnetic field, and with a non-axisymmetric temperature. Most previous treatments of melt motions with vertical magnetic fields have assumed that the temperature and buoyant convection were axisymmetric. In reality, the temperature and resultant buoyant convection often deviate significantly from axisymmetry. For a given non-axisymmetric temperature, the electromagnetic suppression of the axisymmetric part of the buoyant convection is stronger than that of the non-axisymmetric part, so that the deviation from an axisymmetric melt motion increases as the magnetic field strength is increased. The non-axisymmetric part of the buoyant convection includes relatively strong azimuthal velocities adjacent to the electrically insulating vertical crucible wall, because this wall blocks the radial electric currents needed to suppress azimuthal velocities.
    keyword(s): Temperature , Semiconductors (Materials) , Magnetic fields , Convection , Motion AND Electric current ,
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      Buoyant Convection During the Growth of Compound Semiconductors by the Liquid-Encapsulated Czochralski Process With an Axial Magnetic Field and With a Non-Axisymmetric Temperature

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    http://yetl.yabesh.ir/yetl1/handle/yetl/117232
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    contributor authorNancy Ma
    contributor authorJ. S. Walker
    date accessioned2017-05-08T23:50:40Z
    date available2017-05-08T23:50:40Z
    date copyrightMarch, 1996
    date issued1996
    identifier issn0098-2202
    identifier otherJFEGA4-27102#155_1.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/117232
    description abstractThis paper treats the buoyant convection of a molten semiconductor in a cylindrical crucible with a vertical axis, with a uniform vertical magnetic field, and with a non-axisymmetric temperature. Most previous treatments of melt motions with vertical magnetic fields have assumed that the temperature and buoyant convection were axisymmetric. In reality, the temperature and resultant buoyant convection often deviate significantly from axisymmetry. For a given non-axisymmetric temperature, the electromagnetic suppression of the axisymmetric part of the buoyant convection is stronger than that of the non-axisymmetric part, so that the deviation from an axisymmetric melt motion increases as the magnetic field strength is increased. The non-axisymmetric part of the buoyant convection includes relatively strong azimuthal velocities adjacent to the electrically insulating vertical crucible wall, because this wall blocks the radial electric currents needed to suppress azimuthal velocities.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleBuoyant Convection During the Growth of Compound Semiconductors by the Liquid-Encapsulated Czochralski Process With an Axial Magnetic Field and With a Non-Axisymmetric Temperature
    typeJournal Paper
    journal volume118
    journal issue1
    journal titleJournal of Fluids Engineering
    identifier doi10.1115/1.2817494
    journal fristpage155
    journal lastpage159
    identifier eissn1528-901X
    keywordsTemperature
    keywordsSemiconductors (Materials)
    keywordsMagnetic fields
    keywordsConvection
    keywordsMotion AND Electric current
    treeJournal of Fluids Engineering:;1996:;volume( 118 ):;issue: 001
    contenttypeFulltext
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