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contributor authorNancy Ma
contributor authorJ. S. Walker
date accessioned2017-05-08T23:50:40Z
date available2017-05-08T23:50:40Z
date copyrightMarch, 1996
date issued1996
identifier issn0098-2202
identifier otherJFEGA4-27102#155_1.pdf
identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/117232
description abstractThis paper treats the buoyant convection of a molten semiconductor in a cylindrical crucible with a vertical axis, with a uniform vertical magnetic field, and with a non-axisymmetric temperature. Most previous treatments of melt motions with vertical magnetic fields have assumed that the temperature and buoyant convection were axisymmetric. In reality, the temperature and resultant buoyant convection often deviate significantly from axisymmetry. For a given non-axisymmetric temperature, the electromagnetic suppression of the axisymmetric part of the buoyant convection is stronger than that of the non-axisymmetric part, so that the deviation from an axisymmetric melt motion increases as the magnetic field strength is increased. The non-axisymmetric part of the buoyant convection includes relatively strong azimuthal velocities adjacent to the electrically insulating vertical crucible wall, because this wall blocks the radial electric currents needed to suppress azimuthal velocities.
publisherThe American Society of Mechanical Engineers (ASME)
titleBuoyant Convection During the Growth of Compound Semiconductors by the Liquid-Encapsulated Czochralski Process With an Axial Magnetic Field and With a Non-Axisymmetric Temperature
typeJournal Paper
journal volume118
journal issue1
journal titleJournal of Fluids Engineering
identifier doi10.1115/1.2817494
journal fristpage155
journal lastpage159
identifier eissn1528-901X
keywordsTemperature
keywordsSemiconductors (Materials)
keywordsMagnetic fields
keywordsConvection
keywordsMotion AND Electric current
treeJournal of Fluids Engineering:;1996:;volume( 118 ):;issue: 001
contenttypeFulltext


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