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    Hybrid Semiconductor Wafer Inspection Framework via Autonomous Data Annotation

    Source: Journal of Manufacturing Science and Engineering:;2024:;volume( 146 ):;issue: 007::page 70906-1
    Author:
    Han, Changheon
    ,
    Chun, Heebum
    ,
    Lee, Jiho
    ,
    Zhou, Fengfeng
    ,
    Yun, Huitaek
    ,
    Lee, ChaBum
    ,
    Jun, Martin B.G.
    DOI: 10.1115/1.4065276
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: In smart manufacturing, semiconductors play an indispensable role in collecting, processing, and analyzing data, ultimately enabling more agile and productive operations. Given the foundational importance of wafers, the purity of a wafer is essential to maintain the integrity of the overall semiconductor fabrication. This study proposes a novel automated visual inspection (AVI) framework for scrutinizing semiconductor wafers from scratch, capable of identifying defective wafers and pinpointing the location of defects through autonomous data annotation. Initially, this proposed methodology leveraged a texture analysis method known as gray-level co-occurrence matrix (GLCM) that categorized wafer images—captured via a stroboscopic imaging system—into distinct scenarios for high- and low-resolution wafer images. GLCM approaches further allowed for a complete separation of low-resolution wafer images into defective and normal wafer images, as well as the extraction of defect images from defective low-resolution wafer images, which were used for training a convolutional neural network (CNN) model. Consequently, the CNN model excelled in localizing defects on defective low-resolution wafer images, achieving an F1 score—the harmonic mean of precision and recall metrics—exceeding 90.1%. In high-resolution wafer images, a background subtraction technique represented defects as clusters of white points. The quantity of these white points determined the defectiveness and pinpointed locations of defects on high-resolution wafer images. Lastly, the CNN implementation further enhanced performance, robustness, and consistency irrespective of variations in the ratio of white point clusters. This technique demonstrated accuracy in localizing defects on high-resolution wafer images, yielding an F1 score greater than 99.3%.
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      Hybrid Semiconductor Wafer Inspection Framework via Autonomous Data Annotation

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    http://yetl.yabesh.ir/yetl1/handle/yetl/4303442
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    contributor authorHan, Changheon
    contributor authorChun, Heebum
    contributor authorLee, Jiho
    contributor authorZhou, Fengfeng
    contributor authorYun, Huitaek
    contributor authorLee, ChaBum
    contributor authorJun, Martin B.G.
    date accessioned2024-12-24T19:10:56Z
    date available2024-12-24T19:10:56Z
    date copyright5/9/2024 12:00:00 AM
    date issued2024
    identifier issn1087-1357
    identifier othermanu_146_7_070906.pdf
    identifier urihttp://yetl.yabesh.ir/yetl1/handle/yetl/4303442
    description abstractIn smart manufacturing, semiconductors play an indispensable role in collecting, processing, and analyzing data, ultimately enabling more agile and productive operations. Given the foundational importance of wafers, the purity of a wafer is essential to maintain the integrity of the overall semiconductor fabrication. This study proposes a novel automated visual inspection (AVI) framework for scrutinizing semiconductor wafers from scratch, capable of identifying defective wafers and pinpointing the location of defects through autonomous data annotation. Initially, this proposed methodology leveraged a texture analysis method known as gray-level co-occurrence matrix (GLCM) that categorized wafer images—captured via a stroboscopic imaging system—into distinct scenarios for high- and low-resolution wafer images. GLCM approaches further allowed for a complete separation of low-resolution wafer images into defective and normal wafer images, as well as the extraction of defect images from defective low-resolution wafer images, which were used for training a convolutional neural network (CNN) model. Consequently, the CNN model excelled in localizing defects on defective low-resolution wafer images, achieving an F1 score—the harmonic mean of precision and recall metrics—exceeding 90.1%. In high-resolution wafer images, a background subtraction technique represented defects as clusters of white points. The quantity of these white points determined the defectiveness and pinpointed locations of defects on high-resolution wafer images. Lastly, the CNN implementation further enhanced performance, robustness, and consistency irrespective of variations in the ratio of white point clusters. This technique demonstrated accuracy in localizing defects on high-resolution wafer images, yielding an F1 score greater than 99.3%.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleHybrid Semiconductor Wafer Inspection Framework via Autonomous Data Annotation
    typeJournal Paper
    journal volume146
    journal issue7
    journal titleJournal of Manufacturing Science and Engineering
    identifier doi10.1115/1.4065276
    journal fristpage70906-1
    journal lastpage70906-14
    page14
    treeJournal of Manufacturing Science and Engineering:;2024:;volume( 146 ):;issue: 007
    contenttypeFulltext
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    DSpace software copyright © 2002-2015  DuraSpace
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