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    Prediction of Material Removal Rate for Chemical Mechanical Planarization Using Decision Tree-Based Ensemble Learning

    Source: Journal of Manufacturing Science and Engineering:;2019:;volume( 141 ):;issue: 003::page 31003
    Author:
    Li, Zhixiong
    ,
    Wu, Dazhong
    ,
    Yu, Tianyu
    DOI: 10.1115/1.4042051
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: Chemical mechanical planarization (CMP) has been widely used in the semiconductor industry to create planar surfaces with a combination of chemical and mechanical forces. A CMP process is very complex because several chemical and mechanical phenomena (e.g., surface kinetics, electrochemical interfaces, contact mechanics, stress mechanics, hydrodynamics, and tribochemistry) are involved. Predicting the material removal rate (MRR) in a CMP process with sufficient accuracy is essential to achieving uniform surface finish. While physics-based methods have been introduced to predict MRRs, little research has been reported on monitoring and predictive modeling of the MRR in CMP. This paper presents a novel decision tree-based ensemble learning algorithm that can train the predictive model of the MRR. The stacking technique is used to combine three decision tree-based learning algorithms, including the random forests (RF), gradient boosting trees (GBT), and extremely randomized trees (ERT), via a meta-regressor. The proposed method is demonstrated on the data collected from a CMP tool that removes material from the surface of wafers. Experimental results have shown that the decision tree-based ensemble learning algorithm using stacking can predict the MRR in the CMP process with very high accuracy.
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      Prediction of Material Removal Rate for Chemical Mechanical Planarization Using Decision Tree-Based Ensemble Learning

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    http://yetl.yabesh.ir/yetl1/handle/yetl/4256921
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    contributor authorLi, Zhixiong
    contributor authorWu, Dazhong
    contributor authorYu, Tianyu
    date accessioned2019-03-17T11:22:15Z
    date available2019-03-17T11:22:15Z
    date copyright1/17/2019 12:00:00 AM
    date issued2019
    identifier issn1087-1357
    identifier othermanu_141_03_031003.pdf
    identifier urihttp://yetl.yabesh.ir/yetl1/handle/yetl/4256921
    description abstractChemical mechanical planarization (CMP) has been widely used in the semiconductor industry to create planar surfaces with a combination of chemical and mechanical forces. A CMP process is very complex because several chemical and mechanical phenomena (e.g., surface kinetics, electrochemical interfaces, contact mechanics, stress mechanics, hydrodynamics, and tribochemistry) are involved. Predicting the material removal rate (MRR) in a CMP process with sufficient accuracy is essential to achieving uniform surface finish. While physics-based methods have been introduced to predict MRRs, little research has been reported on monitoring and predictive modeling of the MRR in CMP. This paper presents a novel decision tree-based ensemble learning algorithm that can train the predictive model of the MRR. The stacking technique is used to combine three decision tree-based learning algorithms, including the random forests (RF), gradient boosting trees (GBT), and extremely randomized trees (ERT), via a meta-regressor. The proposed method is demonstrated on the data collected from a CMP tool that removes material from the surface of wafers. Experimental results have shown that the decision tree-based ensemble learning algorithm using stacking can predict the MRR in the CMP process with very high accuracy.
    publisherThe American Society of Mechanical Engineers (ASME)
    titlePrediction of Material Removal Rate for Chemical Mechanical Planarization Using Decision Tree-Based Ensemble Learning
    typeJournal Paper
    journal volume141
    journal issue3
    journal titleJournal of Manufacturing Science and Engineering
    identifier doi10.1115/1.4042051
    journal fristpage31003
    journal lastpage031003-14
    treeJournal of Manufacturing Science and Engineering:;2019:;volume( 141 ):;issue: 003
    contenttypeFulltext
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