| contributor author | Kurita, Tsuneo | |
| contributor author | Miyake, Koji | |
| contributor author | Kawata, Kenji | |
| contributor author | Ashida, Kiwamu | |
| contributor author | Kato, Tomohisa | |
| date accessioned | 2017-11-25T07:18:38Z | |
| date available | 2017-11-25T07:18:38Z | |
| date copyright | 2017/7/6 | |
| date issued | 2017 | |
| identifier issn | 2166-0468 | |
| identifier other | jmnm_005_03_031004.pdf | |
| identifier uri | http://138.201.223.254:8080/yetl1/handle/yetl/4235289 | |
| description abstract | The aim of this research is to develop a combined polishing technology for single-crystal silicon carbide (SiC) wafers, which is known to be difficult to process due to its high hardness. This paper proposes a combined polishing method based on converting SiC into a material with a relatively low hardness and then polishing this material using abrasive particles with a higher hardness. An electrochemical technique was tried to reduce the hardness of SiC. The effectiveness of the combined technique is experimentally demonstrated. In addition, the temporal changes of the thickness of SiO2 layer and the relationship between the electrochemical machining current and the thickness of SiO2 layer are shown. | |
| publisher | The American Society of Mechanical Engineers (ASME) | |
| title | Development of Highly Efficient Combined Polishing Method for Single-Crystal Silicon Carbide | |
| type | Journal Paper | |
| journal volume | 5 | |
| journal issue | 3 | |
| journal title | Journal of Micro and Nano-Manufacturing | |
| identifier doi | 10.1115/1.4036828 | |
| journal fristpage | 31004 | |
| journal lastpage | 031004-5 | |
| tree | Journal of Micro and Nano-Manufacturing:;2017:;volume( 005 ):;issue: 003 | |
| contenttype | Fulltext | |
