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contributor authorSaffar, S.
contributor authorGouttebroze, S.
contributor authorZhang, Z. L.
date accessioned2017-05-09T01:12:14Z
date available2017-05-09T01:12:14Z
date issued2014
identifier issn0199-6231
identifier othersol_136_01_011001.pdf
identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/156225
description abstractVibration is one of the most common loading modes during handling and transport of solar silicon wafers and has a great influence on the breakage rate. In order to control the breakage rate during handling and facilitate the optimization of the processing steps, it is important to understand the factors which influence the natural frequency of thin silicon wafers. In this study, we applied nonlinear finite element method to investigate the correlation of natural frequency of thin solar silicon wafer with material microstructures (grain size and grain orientation), thickness variation and crack geometry (position and size). It has been found that the natural frequency for anisotropic single crystal silicon wafer is a strong function of material orientation. Less than 10% thickness variation will have a negligible effect on natural frequency. It is also found out that cracks smaller than 20 mm have no dominant effect on the first five natural frequency modes anywhere in the silicon wafer.
publisherThe American Society of Mechanical Engineers (ASME)
titleThe Effect of Microstructure, Thickness Variation, and Crack on the Natural Frequency of Solar Silicon Wafers
typeJournal Paper
journal volume136
journal issue1
journal titleJournal of Solar Energy Engineering
identifier doi10.1115/1.4024248
journal fristpage11001
journal lastpage11001
identifier eissn1528-8986
treeJournal of Solar Energy Engineering:;2014:;volume( 136 ):;issue: 001
contenttypeFulltext


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