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contributor authorTuesta, Alfredo D.
contributor authorBhuiyan, Aizaz
contributor authorLucht, Robert P.
contributor authorFisher, Timothy S.
date accessioned2017-05-09T01:11:30Z
date available2017-05-09T01:11:30Z
date issued2014
identifier issn2166-0468
identifier otherjmnm_002_03_031002.pdf
identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/156002
description abstractRotational temperature profiles of H2 in a microwave plasma chemical vapor deposition (MPCVD) reactor were measured via coherent antiStokes Raman scattering (CARS) spectroscopy. The temperature was found to increase with reactor pressure, plasma generator power, and distance from the deposition surface. At 10 Torr, the measured temperature range was approximately 700–1200 K while at 30 Torr it was 1200–2000 K under the conditions studied. The introduction of CH4 and N2 to the plasma increased the rotational temperature consistently. These findings will aid in understanding the function of the chemical composition and reactions in the plasma environment of these reactors which, to date, remains obscure.
publisherThe American Society of Mechanical Engineers (ASME)
titleLaser Diagnostics of Plasma in Synthesis of Graphene Based Materials
typeJournal Paper
journal volume2
journal issue3
journal titleJournal of Micro and Nano
identifier doi10.1115/1.4027547
journal fristpage31002
journal lastpage31002
identifier eissn1932-619X
treeJournal of Micro and Nano-Manufacturing:;2014:;volume( 002 ):;issue: 003
contenttypeFulltext


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