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    Heat Dissipation Mechanism at Carbon Nanotube Junctions on Silicon Oxide Substrate

    Source: Journal of Heat Transfer:;2014:;volume( 136 ):;issue: 005::page 52401
    Author:
    Chen, Liang
    ,
    Kumar, Satish
    DOI: 10.1115/1.4025436
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: This study investigates heat dissipation at carbon nanotube (CNT) junctions supported on silicon dioxide substrate using molecular dynamics simulations. The temperature rise in a CNT (∼top CNT) not making direct contact with the oxide substrate but only supported by other CNTs (∼bottom CNT) is observed to be hundreds of degree higher compared with the CNTs wellcontacted with the substrate at similar power densities. The analysis of spectral temperature decay of CNToxide system shows very fast intratube energy transfer in a CNT from highfrequency band to intermediatefrequency bands. The low frequency phonon band (0–5 THz) of top CNT shows twostage energy relaxation which results from the efficient coupling of low frequency phonons in the CNToxide system and the blocking of direct transport of highand intermediatefrequency phonons of top CNT to the oxide substrate by bottom CNT.
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      Heat Dissipation Mechanism at Carbon Nanotube Junctions on Silicon Oxide Substrate

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    http://yetl.yabesh.ir/yetl1/handle/yetl/155265
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    contributor authorChen, Liang
    contributor authorKumar, Satish
    date accessioned2017-05-09T01:09:25Z
    date available2017-05-09T01:09:25Z
    date issued2014
    identifier issn0022-1481
    identifier otherht_136_05_052401.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/155265
    description abstractThis study investigates heat dissipation at carbon nanotube (CNT) junctions supported on silicon dioxide substrate using molecular dynamics simulations. The temperature rise in a CNT (∼top CNT) not making direct contact with the oxide substrate but only supported by other CNTs (∼bottom CNT) is observed to be hundreds of degree higher compared with the CNTs wellcontacted with the substrate at similar power densities. The analysis of spectral temperature decay of CNToxide system shows very fast intratube energy transfer in a CNT from highfrequency band to intermediatefrequency bands. The low frequency phonon band (0–5 THz) of top CNT shows twostage energy relaxation which results from the efficient coupling of low frequency phonons in the CNToxide system and the blocking of direct transport of highand intermediatefrequency phonons of top CNT to the oxide substrate by bottom CNT.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleHeat Dissipation Mechanism at Carbon Nanotube Junctions on Silicon Oxide Substrate
    typeJournal Paper
    journal volume136
    journal issue5
    journal titleJournal of Heat Transfer
    identifier doi10.1115/1.4025436
    journal fristpage52401
    journal lastpage52401
    identifier eissn1528-8943
    treeJournal of Heat Transfer:;2014:;volume( 136 ):;issue: 005
    contenttypeFulltext
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    DSpace software copyright © 2002-2015  DuraSpace
    نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
    yabeshDSpacePersian