A Comparative Study of Thermal Metrology Techniques for Ultraviolet Light Emitting DiodesSource: Journal of Heat Transfer:;2013:;volume( 135 ):;issue: 009::page 91201DOI: 10.1115/1.4024359Publisher: The American Society of Mechanical Engineers (ASME)
Abstract: Methods used to measure the temperature of AlxGa1−xN based ultraviolet light emitting diodes (UV LEDs) are based on optical or electrical phenomena that are sensitive to either local, surface, or average temperatures within the LED. A comparative study of the temperature rise of AlxGa1−xN UV LEDs measured by microRaman spectroscopy, infrared (IR) thermography, and the forward voltage method is presented. Experimental temperature measurements are provided for UV LEDs with micropixel and interdigitated contact geometries, as well as for a number of different packaging configurations. It was found that IR spectroscopy was sensitive to optical properties of the device layers, while forward voltage method provided higher temperatures, in general. Raman spectroscopy was used to measure specific layers within the LED, showing that growth substrate temperatures in the flipchip LEDs agreed more closely to IR measurements while layers closer to the multiple quantum wells (MQWs) agreed more closely with Forward Voltage measurements.
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| contributor author | Natarajan, Shweta | |
| contributor author | Habtemichael, Yishak | |
| contributor author | Graham, Samuel | |
| date accessioned | 2017-05-09T01:00:00Z | |
| date available | 2017-05-09T01:00:00Z | |
| date issued | 2013 | |
| identifier issn | 0022-1481 | |
| identifier other | ht_135_09_091201.pdf | |
| identifier uri | http://yetl.yabesh.ir/yetl/handle/yetl/152210 | |
| description abstract | Methods used to measure the temperature of AlxGa1−xN based ultraviolet light emitting diodes (UV LEDs) are based on optical or electrical phenomena that are sensitive to either local, surface, or average temperatures within the LED. A comparative study of the temperature rise of AlxGa1−xN UV LEDs measured by microRaman spectroscopy, infrared (IR) thermography, and the forward voltage method is presented. Experimental temperature measurements are provided for UV LEDs with micropixel and interdigitated contact geometries, as well as for a number of different packaging configurations. It was found that IR spectroscopy was sensitive to optical properties of the device layers, while forward voltage method provided higher temperatures, in general. Raman spectroscopy was used to measure specific layers within the LED, showing that growth substrate temperatures in the flipchip LEDs agreed more closely to IR measurements while layers closer to the multiple quantum wells (MQWs) agreed more closely with Forward Voltage measurements. | |
| publisher | The American Society of Mechanical Engineers (ASME) | |
| title | A Comparative Study of Thermal Metrology Techniques for Ultraviolet Light Emitting Diodes | |
| type | Journal Paper | |
| journal volume | 135 | |
| journal issue | 9 | |
| journal title | Journal of Heat Transfer | |
| identifier doi | 10.1115/1.4024359 | |
| journal fristpage | 91201 | |
| journal lastpage | 91201 | |
| identifier eissn | 1528-8943 | |
| tree | Journal of Heat Transfer:;2013:;volume( 135 ):;issue: 009 | |
| contenttype | Fulltext |