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    Heat Transfer Across Metal-Dielectric Interfaces During Ultrafast-Laser Heating

    Source: Journal of Heat Transfer:;2012:;volume( 134 ):;issue: 004::page 42402
    Author:
    Liang Guo
    ,
    Stephen L. Hodson
    ,
    Timothy S. Fisher
    ,
    Xianfan Xu
    DOI: 10.1115/1.4005255
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: Heat transfer across metal-dielectric interfaces involves transport of electrons and phonons accomplished either by coupling between phonons in metal and dielectric or by coupling between electrons in metal and phonons in dielectric. In this work, we investigate heat transfer across metal-dielectric interfaces during ultrafast-laser heating of thin metal films coated on dielectric substrates. By employing ultrafast-laser heating that creates strong thermal nonequilibrium between electrons and phonons in metal, it is possible to isolate the effect of the direct electron–phonon coupling across the interface and thus facilitate its study. Transient thermo-reflectance measurements using femtosecond laser pulses are performed on Au–Si samples while the simulation results based on a two-temperature model are compared with the measured data. A contact resistance between electrons in Au and phonons in Si represents the coupling strength of the direct electron–phonon interactions at the interface. Our results reveal that this contact resistance can be sufficiently small to indicate strong direct coupling between electrons in metal and phonons in dielectric.
    keyword(s): Temperature , Heat transfer , Electrons , Metals , Lasers , Measurement , Reflectance , Phonons , Top-tensioned risers , Heating AND Simulation results ,
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      Heat Transfer Across Metal-Dielectric Interfaces During Ultrafast-Laser Heating

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    http://yetl.yabesh.ir/yetl1/handle/yetl/149492
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    contributor authorLiang Guo
    contributor authorStephen L. Hodson
    contributor authorTimothy S. Fisher
    contributor authorXianfan Xu
    date accessioned2017-05-09T00:52:21Z
    date available2017-05-09T00:52:21Z
    date copyrightApril, 2012
    date issued2012
    identifier issn0022-1481
    identifier otherJHTRAO-27938#042402_1.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/149492
    description abstractHeat transfer across metal-dielectric interfaces involves transport of electrons and phonons accomplished either by coupling between phonons in metal and dielectric or by coupling between electrons in metal and phonons in dielectric. In this work, we investigate heat transfer across metal-dielectric interfaces during ultrafast-laser heating of thin metal films coated on dielectric substrates. By employing ultrafast-laser heating that creates strong thermal nonequilibrium between electrons and phonons in metal, it is possible to isolate the effect of the direct electron–phonon coupling across the interface and thus facilitate its study. Transient thermo-reflectance measurements using femtosecond laser pulses are performed on Au–Si samples while the simulation results based on a two-temperature model are compared with the measured data. A contact resistance between electrons in Au and phonons in Si represents the coupling strength of the direct electron–phonon interactions at the interface. Our results reveal that this contact resistance can be sufficiently small to indicate strong direct coupling between electrons in metal and phonons in dielectric.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleHeat Transfer Across Metal-Dielectric Interfaces During Ultrafast-Laser Heating
    typeJournal Paper
    journal volume134
    journal issue4
    journal titleJournal of Heat Transfer
    identifier doi10.1115/1.4005255
    journal fristpage42402
    identifier eissn1528-8943
    keywordsTemperature
    keywordsHeat transfer
    keywordsElectrons
    keywordsMetals
    keywordsLasers
    keywordsMeasurement
    keywordsReflectance
    keywordsPhonons
    keywordsTop-tensioned risers
    keywordsHeating AND Simulation results
    treeJournal of Heat Transfer:;2012:;volume( 134 ):;issue: 004
    contenttypeFulltext
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