| contributor author | X. Zhang | |
| contributor author | E. G. Fu | |
| contributor author | L. Shao | |
| contributor author | H. Wang | |
| contributor author | Nan Li | |
| contributor author | A. Misra | |
| contributor author | Y.-Q. Wang | |
| date accessioned | 2017-05-09T00:50:44Z | |
| date available | 2017-05-09T00:50:44Z | |
| date copyright | October, 2012 | |
| date issued | 2012 | |
| identifier issn | 0094-4289 | |
| identifier other | JEMTA8-926030#041010_1.pdf | |
| identifier uri | http://yetl.yabesh.ir/yetl/handle/yetl/148962 | |
| description abstract | We review He ion induced radiation damage in several metallic multilayer systems, including Cu/V, Cu/Mo, Fe/W, and Al/Nb up to a peak dose of several displacements per atom (dpa). Size dependent radiation damage is observed in all systems. Nanolayer composites can store a very high concentration of He. Layer interfaces promote the recombination of opposite type of point defects and hence reduce the accumulative defect density, swelling, and lattice distortion. Interfaces also alleviate radiation hardening substantially. The chemical stability of interfaces is an important issue when considering the design of radiation tolerant nanolayer composites. Immiscible and certain miscible systems possess superior stability against He ion irradiation. Challenge and future directions are briefly discussed. | |
| publisher | The American Society of Mechanical Engineers (ASME) | |
| title | Design of Radiation Tolerant Nanostructured Metallic Multilayers | |
| type | Journal Paper | |
| journal volume | 134 | |
| journal issue | 4 | |
| journal title | Journal of Engineering Materials and Technology | |
| identifier doi | 10.1115/1.4006979 | |
| journal fristpage | 41010 | |
| identifier eissn | 1528-8889 | |
| keywords | Density | |
| keywords | Radiation (Physics) | |
| keywords | Design | |
| keywords | Bubbles | |
| keywords | Irradiation (Radiation exposure) | |
| keywords | Atoms AND Product quality | |
| tree | Journal of Engineering Materials and Technology:;2012:;volume( 134 ):;issue: 004 | |
| contenttype | Fulltext | |