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    On the Linear Temperature Dependence of Phonon Thermal Boundary Conductance in the Classical Limit

    Source: Journal of Heat Transfer:;2011:;volume( 133 ):;issue: 007::page 74501
    Author:
    John C. Duda
    ,
    Pamela M. Norris
    ,
    Patrick E. Hopkins
    DOI: 10.1115/1.4003575
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: We present a new model for predicting thermal boundary conductance in the classical limit. This model takes a different form than those of the traditionally used mismatch theories in the fact that the temperature dependence of thermal boundary conductance is driven by the phononic scattering mechanisms of the materials comprising the interface as opposed to the heat capacities of those materials. The model developed in this work assumes that a phonon on one side of an interface may not scatter at the interface itself but instead scatter with phonons in the adjacent material via the scattering processes intrinsic in the adjacent material. We find that this model is in good agreement with classical molecular dynamics simulations of phonon transport across a Si/Ge interface.
    keyword(s): Phonons , Radiation scattering , Electrical conductance , Temperature , Molecular dynamics AND Engineering simulation ,
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      On the Linear Temperature Dependence of Phonon Thermal Boundary Conductance in the Classical Limit

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    http://yetl.yabesh.ir/yetl1/handle/yetl/146669
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    contributor authorJohn C. Duda
    contributor authorPamela M. Norris
    contributor authorPatrick E. Hopkins
    date accessioned2017-05-09T00:45:00Z
    date available2017-05-09T00:45:00Z
    date copyrightJuly, 2011
    date issued2011
    identifier issn0022-1481
    identifier otherJHTRAO-27917#074501_1.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/146669
    description abstractWe present a new model for predicting thermal boundary conductance in the classical limit. This model takes a different form than those of the traditionally used mismatch theories in the fact that the temperature dependence of thermal boundary conductance is driven by the phononic scattering mechanisms of the materials comprising the interface as opposed to the heat capacities of those materials. The model developed in this work assumes that a phonon on one side of an interface may not scatter at the interface itself but instead scatter with phonons in the adjacent material via the scattering processes intrinsic in the adjacent material. We find that this model is in good agreement with classical molecular dynamics simulations of phonon transport across a Si/Ge interface.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleOn the Linear Temperature Dependence of Phonon Thermal Boundary Conductance in the Classical Limit
    typeJournal Paper
    journal volume133
    journal issue7
    journal titleJournal of Heat Transfer
    identifier doi10.1115/1.4003575
    journal fristpage74501
    identifier eissn1528-8943
    keywordsPhonons
    keywordsRadiation scattering
    keywordsElectrical conductance
    keywordsTemperature
    keywordsMolecular dynamics AND Engineering simulation
    treeJournal of Heat Transfer:;2011:;volume( 133 ):;issue: 007
    contenttypeFulltext
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    DSpace software copyright © 2002-2015  DuraSpace
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