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    Effect of Phonon Dispersion on Thermal Conduction Across Si/Ge Interfaces

    Source: Journal of Heat Transfer:;2011:;volume( 133 ):;issue: 012::page 122401
    Author:
    Dhruv Singh
    ,
    Jayathi Y. Murthy
    ,
    Timothy S. Fisher
    DOI: 10.1115/1.4004429
    Publisher: The American Society of Mechanical Engineers (ASME)
    Abstract: We report finite-volume simulations of the phonon Boltzmann transport equation (BTE) for heat conduction across the heterogeneous interfaces in SiGe superlattices. The diffuse mismatch model incorporating phonon dispersion and polarization is implemented over a wide range of Knudsen numbers. The results indicate that the thermal conductivity of a Si/Ge superlattice is much lower than that of the constitutive bulk materials for superlattice periods in the submicron regime. We report results for effective thermal conductivity of various material volume fractions and superlattice periods. Details of the nonequilibrium energy exchange between optical and acoustic phonons that originate from the mismatch of phonon spectra in silicon and germanium are delineated for the first time. Conditions are identified for which this effect can produce significantly more thermal resistance than that due to boundary scattering of phonons.
    keyword(s): Superlattices , Phonons , Radiation scattering , Electromagnetic scattering , Thermal conductivity , Temperature , Acoustics AND Heat flux ,
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      Effect of Phonon Dispersion on Thermal Conduction Across Si/Ge Interfaces

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    http://yetl.yabesh.ir/yetl1/handle/yetl/146540
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    contributor authorDhruv Singh
    contributor authorJayathi Y. Murthy
    contributor authorTimothy S. Fisher
    date accessioned2017-05-09T00:44:46Z
    date available2017-05-09T00:44:46Z
    date copyrightDecember, 2011
    date issued2011
    identifier issn0022-1481
    identifier otherJHTRAO-27928#122401_1.pdf
    identifier urihttp://yetl.yabesh.ir/yetl/handle/yetl/146540
    description abstractWe report finite-volume simulations of the phonon Boltzmann transport equation (BTE) for heat conduction across the heterogeneous interfaces in SiGe superlattices. The diffuse mismatch model incorporating phonon dispersion and polarization is implemented over a wide range of Knudsen numbers. The results indicate that the thermal conductivity of a Si/Ge superlattice is much lower than that of the constitutive bulk materials for superlattice periods in the submicron regime. We report results for effective thermal conductivity of various material volume fractions and superlattice periods. Details of the nonequilibrium energy exchange between optical and acoustic phonons that originate from the mismatch of phonon spectra in silicon and germanium are delineated for the first time. Conditions are identified for which this effect can produce significantly more thermal resistance than that due to boundary scattering of phonons.
    publisherThe American Society of Mechanical Engineers (ASME)
    titleEffect of Phonon Dispersion on Thermal Conduction Across Si/Ge Interfaces
    typeJournal Paper
    journal volume133
    journal issue12
    journal titleJournal of Heat Transfer
    identifier doi10.1115/1.4004429
    journal fristpage122401
    identifier eissn1528-8943
    keywordsSuperlattices
    keywordsPhonons
    keywordsRadiation scattering
    keywordsElectromagnetic scattering
    keywordsThermal conductivity
    keywordsTemperature
    keywordsAcoustics AND Heat flux
    treeJournal of Heat Transfer:;2011:;volume( 133 ):;issue: 012
    contenttypeFulltext
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